Test: The P-N Junction


10 Questions MCQ Test Power Electronics | Test: The P-N Junction


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Attempt Test: The P-N Junction | 10 questions in 10 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Power Electronics for Electrical Engineering (EE) Exam | Download free PDF with solutions
QUESTION: 1

The p-region has a greater concentration of __________ as compared to the n-region in a P-N junction.

Solution:

 Holes are the majority charge carriers in p-type material.

QUESTION: 2

A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impurities

Solution:

Donor impurities denote an electron to the n-type material making it a electron majority carrier & vice-versa.

QUESTION: 3

In the p & n regions of the p-n junction the _________ & the ___________ are the majority charge carriers respectively.

Solution:

 Holes are the majority charge carriers in p-type material & vice-versa.

QUESTION: 4

The n-region has a greater concentration of _________ as compared to the p-region in a P-N junction diode.

Solution:

Electrons are the majority charge carriers in n-type material.

QUESTION: 5

 Which of the below mentioned statements is false regarding a p-n junction diode?

Solution:

Diode is a two terminal device, anode & cathode are the two terminals.

QUESTION: 6

 In the p & n regions of the p-n junction the _________ & the ___________ are the minority charge carriers respectively.

Solution:

Holes are the minority charge carriers in n-type material & vice-versa.

QUESTION: 7

A Schottky diode has __________

Solution:
QUESTION: 8

When a physical contact between a p-region & n-region is established which of the following is most likely to take place?

Solution:

When p & n region come together diffusion takes places & a depletion region is established with opposite charges on both the sides of the junction.

QUESTION: 9

Which of the following is true in case of an unbiased p-n junction diode?

Solution:

A potential difference is established across the junctions due to recombination of holes & electrons. This growing field (barrier potential) stops the further diffusion.

QUESTION: 10

 Which of the following is true in case of a forward biased p-n junction diode?

Solution:

The diode is forward biased, positive is connected to p & vice-versa, as such batter provides EMF to drive electrons from n-region to p-region.

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