The p-region has a greater concentration of __________ as compared to the n-region in a P-N junction.
Holes are the majority charge carriers in p-type material.
A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impurities
Donor impurities denote an electron to the n-type material making it a electron majority carrier & vice-versa.
In the p & n regions of the p-n junction the _________ & the ___________ are the majority charge carriers respectively.
Holes are the majority charge carriers in p-type material & vice-versa.
The n-region has a greater concentration of _________ as compared to the p-region in a P-N junction diode.
Electrons are the majority charge carriers in n-type material.
Which of the below mentioned statements is false regarding a p-n junction diode?
Diode is a two terminal device, anode & cathode are the two terminals.
In the p & n regions of the p-n junction the _________ & the ___________ are the minority charge carriers respectively.
Holes are the minority charge carriers in n-type material & vice-versa.
A Schottky diode has __________
When a physical contact between a p-region & n-region is established which of the following is most likely to take place?
When p & n region come together diffusion takes places & a depletion region is established with opposite charges on both the sides of the junction.
Which of the following is true in case of an unbiased p-n junction diode?
A potential difference is established across the junctions due to recombination of holes & electrons. This growing field (barrier potential) stops the further diffusion.
Which of the following is true in case of a forward biased p-n junction diode?
The diode is forward biased, positive is connected to p & vice-versa, as such batter provides EMF to drive electrons from n-region to p-region.