Test: Power Diode
20 Questions MCQ Test Power Electronics | Test: Power Diode
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Large reverse breakdown voltage is desirable whereas others will increases the losses.
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
The above process simply the one used to manufacture power diodes.
It has two terminals anode and cathode same as that of a ordinary diode. In fact, a power diode is nothing but a signal diode with a extra layer.
First in the forward region & Third in the reverse biased mode.
Which of the following is true in case of a power diode with R load?
R load therefore V and I are linear and in phase.
K is positive w.r.t the A when the device is reversed biased.
A is positive w.r.t the K when the device is forward biased.
Leakage current does not flow in IDEAL diode.
The peak inverse current IP for a power diode is given by the expression
The leakage current is the reveres recovery time (t) into the rate of change of current.
Peak reverse current is independent of S-factor smaller the value of S-factor larger the oscillatory over voltage.
If V & I are the forward voltage & current respectively, then the power loss across the diode would be
Simply power (P) is voltage into current i.e. VI
The power loss in which of the following cases would be the maximum?
P=VI Hence, it would be maximum when both V and I are maximum.
Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the
Due to the stored charges during the earlier current flow, even when the current reduces to zero due to some structural properties of the device, the device takes time to sweep out the stored charges.
For a p-n junction diode, the peak inverse current & the reverse recovery time are dependent on
It only depends upon the number stored charges which depends upon the rate of change of current.
In converters diodes are used to feed the energy back to the load in case of an inductive load.
When the p-n junction diode is forward biased, the width of the depletion region __________
When forward biased depletion layer decreases & finally it collapses to allow the current flow.
When the p-n junction diode is reversed biased, the width of the depletion region __________
When reverse biased depletion layer increases until the breakdown value is reached.
In case of a practical p-n junction diode, the rise in the junction temperature ___________
The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.
In the equilibrium state, the barrier potential across a unbiased silicon diode is _________
Barrier potential is due to the charges that establish an electric field across the two junctions.
In the equilibrium state the barrier, potential across a unbiased germanium diode is __________
Barrier potential is due to the charges that establish an electric field across the two junctions.
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