Test: Power Diode


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20 Questions MCQ Test Power Electronics | Test: Power Diode

Test: Power Diode for Electrical Engineering (EE) 2023 is part of Power Electronics preparation. The Test: Power Diode questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Power Diode MCQs are made for Electrical Engineering (EE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Power Diode below.
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Test: Power Diode - Question 1

An ideal power diode must have

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Large reverse breakdown voltage is desirable whereas others will increases the losses.

Test: Power Diode - Question 2

To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________

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The above process simply the one used to manufacture power diodes.

Test: Power Diode - Question 3

Power diode is __________

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It has two terminals anode and cathode same as that of a ordinary diode. In fact, a power diode is nothing but a signal diode with a extra layer.

Test: Power Diode - Question 4

The V-I Characteristics of the diode lie in the

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First in the forward region & Third in the reverse biased mode.

Test: Power Diode - Question 5

 Which of the following is true in case of a power diode with R load?

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R load therefore V and I are linear and in phase.

Test: Power Diode - Question 6

A diode is said to be reversed biased when the

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 K is positive w.r.t the A when the device is reversed biased.

Test: Power Diode - Question 7

A diode is said to be forward biased when the

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A is positive w.r.t the K when the device is forward biased.

Test: Power Diode - Question 8

 In case of an ideal power diode, the leakage current flows from

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 Leakage current does not flow in IDEAL diode.

Test: Power Diode - Question 9

The peak inverse current IP for a power diode is given by the expression

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The leakage current is the reveres recovery time (t) into the rate of change of current.

Test: Power Diode - Question 10

A power diode with small softness factor (S-factor) has

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Peak reverse current is independent of S-factor smaller the value of S-factor larger the oscillatory over voltage.

Test: Power Diode - Question 11

If V & I are the forward voltage & current respectively, then the power loss across the diode would be

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Simply power (P) is voltage into current i.e. VI

Test: Power Diode - Question 12

 The power loss in which of the following cases would be the maximum?

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P=VI Hence, it would be maximum when both V and I are maximum.

Test: Power Diode - Question 13

Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the

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Due to the stored charges during the earlier current flow, even when the current reduces to zero due to some structural properties of the device, the device takes time to sweep out the stored charges.

Test: Power Diode - Question 14

For a p-n junction diode, the peak inverse current & the reverse recovery time are dependent on

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It only depends upon the number stored charges which depends upon the rate of change of current.

Test: Power Diode - Question 15

In an AC-DC converter, a diode might be used as a

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 In converters diodes are used to feed the energy back to the load in case of an inductive load.

Test: Power Diode - Question 16

When the p-n junction diode is forward biased, the width of the depletion region __________

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 When forward biased depletion layer decreases & finally it collapses to allow the current flow.

Test: Power Diode - Question 17

When the p-n junction diode is reversed biased, the width of the depletion region __________

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When reverse biased depletion layer increases until the breakdown value is reached.

Test: Power Diode - Question 18

 In case of a practical p-n junction diode, the rise in the junction temperature ___________

Detailed Solution for Test: Power Diode - Question 18

The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.

Test: Power Diode - Question 19

 In the equilibrium state, the barrier potential across a unbiased silicon diode is _________

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Barrier potential is due to the charges that establish an electric field across the two junctions.

Test: Power Diode - Question 20

In the equilibrium state the barrier, potential across a unbiased germanium diode is __________

Detailed Solution for Test: Power Diode - Question 20

Barrier potential is due to the charges that establish an electric field across the two junctions.

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