Page 1
SEMICONDUCTOR DEVICES
1.What is the order of energy gap in a conductor, semi conductor, and
insulator?.
Conductor - no energy gap
Semi Conductor - It is of the order of 1 ev.
Insulator - 6 ev (or) more than 6 ev.
2. Zener effect and avalanche effect are the two possible break down
mechanisms that helps the external current . Why
Zener effect : The electric field in the depletion layer reach a point that it can
break the covalent bonds and generate electron–hole pairs.
Avalanche breakdown : The minority carriers that across the depletion layer
under the influence of the electric field gain sufficient kinetic energy to be able to
break covalent bond in atoms which they collide.
3. Light emission in semiconductor is the process of creation of a photon by
means of the annihilation of an electron-hole pair. How can we create them. Give
the necessary condition for the light emission?
h? = E
eh
greater than or equal to E
g.
Condition for light emission is excess carriers.
4.Why does the conductivity of a semi conductor change with the rise in
temperature ?
When a semi conductor is heated more & more electrons get enough energy to
jump across the forbidden energy gap from valence band to the conduction
band, where they are free to conduct electricity. Thereby increasing the
conductivity of a semi conductor.
5. On the basis of energy level diagram, identify the P-type semi conductor &
N-type semi conductor
C.B
_ _ _ _ _ _ _ _ _ _ _
V.B
.
C.B
_ _ _ _ _ _ _ _ _ _ _ _
V.B
Donor energy level
Acceptor energy level
Page 2
SEMICONDUCTOR DEVICES
1.What is the order of energy gap in a conductor, semi conductor, and
insulator?.
Conductor - no energy gap
Semi Conductor - It is of the order of 1 ev.
Insulator - 6 ev (or) more than 6 ev.
2. Zener effect and avalanche effect are the two possible break down
mechanisms that helps the external current . Why
Zener effect : The electric field in the depletion layer reach a point that it can
break the covalent bonds and generate electron–hole pairs.
Avalanche breakdown : The minority carriers that across the depletion layer
under the influence of the electric field gain sufficient kinetic energy to be able to
break covalent bond in atoms which they collide.
3. Light emission in semiconductor is the process of creation of a photon by
means of the annihilation of an electron-hole pair. How can we create them. Give
the necessary condition for the light emission?
h? = E
eh
greater than or equal to E
g.
Condition for light emission is excess carriers.
4.Why does the conductivity of a semi conductor change with the rise in
temperature ?
When a semi conductor is heated more & more electrons get enough energy to
jump across the forbidden energy gap from valence band to the conduction
band, where they are free to conduct electricity. Thereby increasing the
conductivity of a semi conductor.
5. On the basis of energy level diagram, identify the P-type semi conductor &
N-type semi conductor
C.B
_ _ _ _ _ _ _ _ _ _ _
V.B
.
C.B
_ _ _ _ _ _ _ _ _ _ _ _
V.B
Donor energy level
Acceptor energy level
6. A student has to study the characteristics of a P-N Junction diode. What kind
of a circuit arrangement should she use for this purpose?
7. Draw the typical shape of input characteristics likely to be obtainedby a
student . What do we understand by the forward bias and reverse bias of the
diode? In which of these states does the diode being used as a rectifier.?
8. To achieve light amplification, We should provide positive feed back in
LASER .Why?
Laser is not an amplifier but an oscillator! However, any oscillator is an amplifier
with a positive feedback. To obtain lasing , it is necessary to achieve light
amplification and provide positive optical feedback.
9. Self supporting stimulated emission is the principle of a Laser .why?
Probability of stimulated emission is proportional to the density of excess
electrons and holes , and to the density of photons. Under the normal
circumstances it is negligible. Therefore if we provide a positive feedback , the
stimulated emission can become self supporting.
11. If the active layer in a P-N photo diode is the thick depletion layer then P-N
Photodiode act very effective . Why?
In p-I-n photodiode ,due to thick i – layer the sensitivity improves
dramatically.. Large reverse biases (< 100V for Si ) may be required.
12. Modern technology use poly silicon instead of metal to form the gate. Why?
Poly silicon has high conductivity compare to metal.
Page 3
SEMICONDUCTOR DEVICES
1.What is the order of energy gap in a conductor, semi conductor, and
insulator?.
Conductor - no energy gap
Semi Conductor - It is of the order of 1 ev.
Insulator - 6 ev (or) more than 6 ev.
2. Zener effect and avalanche effect are the two possible break down
mechanisms that helps the external current . Why
Zener effect : The electric field in the depletion layer reach a point that it can
break the covalent bonds and generate electron–hole pairs.
Avalanche breakdown : The minority carriers that across the depletion layer
under the influence of the electric field gain sufficient kinetic energy to be able to
break covalent bond in atoms which they collide.
3. Light emission in semiconductor is the process of creation of a photon by
means of the annihilation of an electron-hole pair. How can we create them. Give
the necessary condition for the light emission?
h? = E
eh
greater than or equal to E
g.
Condition for light emission is excess carriers.
4.Why does the conductivity of a semi conductor change with the rise in
temperature ?
When a semi conductor is heated more & more electrons get enough energy to
jump across the forbidden energy gap from valence band to the conduction
band, where they are free to conduct electricity. Thereby increasing the
conductivity of a semi conductor.
5. On the basis of energy level diagram, identify the P-type semi conductor &
N-type semi conductor
C.B
_ _ _ _ _ _ _ _ _ _ _
V.B
.
C.B
_ _ _ _ _ _ _ _ _ _ _ _
V.B
Donor energy level
Acceptor energy level
6. A student has to study the characteristics of a P-N Junction diode. What kind
of a circuit arrangement should she use for this purpose?
7. Draw the typical shape of input characteristics likely to be obtainedby a
student . What do we understand by the forward bias and reverse bias of the
diode? In which of these states does the diode being used as a rectifier.?
8. To achieve light amplification, We should provide positive feed back in
LASER .Why?
Laser is not an amplifier but an oscillator! However, any oscillator is an amplifier
with a positive feedback. To obtain lasing , it is necessary to achieve light
amplification and provide positive optical feedback.
9. Self supporting stimulated emission is the principle of a Laser .why?
Probability of stimulated emission is proportional to the density of excess
electrons and holes , and to the density of photons. Under the normal
circumstances it is negligible. Therefore if we provide a positive feedback , the
stimulated emission can become self supporting.
11. If the active layer in a P-N photo diode is the thick depletion layer then P-N
Photodiode act very effective . Why?
In p-I-n photodiode ,due to thick i – layer the sensitivity improves
dramatically.. Large reverse biases (< 100V for Si ) may be required.
12. Modern technology use poly silicon instead of metal to form the gate. Why?
Poly silicon has high conductivity compare to metal.
15. Digiatal signal is preferred for communication Why not analog signal?Give
its waveform.
A continuous time varying wave form of a current (or) voltage is called analogue
signal.
A digital signal in a two level voltage signal (ie) “0” and “1” . Digital signals are in
the form of pulse of equal level.
16. In a given diagram ,is the diode reverse (or) forward biased?.
Reverse biased.
17.Identify the logic gate, Give its truth table and output wave form?.
NAND GATE.
18.The ratio of number of free electrons to holes n
e
/n
h
for two different materials
A and B are 1 and <1 respectively. Name the type of semi conductor to which A
and B belongs.
If n
e
/n
h =1 .
Hence A is intrinsic semi conductor.
If n
e
/n
h
<1 , n
e
<n
h
hence B is P-type.
19.Can you identify waveform. How will you convert A.C To D.C?
Page 4
SEMICONDUCTOR DEVICES
1.What is the order of energy gap in a conductor, semi conductor, and
insulator?.
Conductor - no energy gap
Semi Conductor - It is of the order of 1 ev.
Insulator - 6 ev (or) more than 6 ev.
2. Zener effect and avalanche effect are the two possible break down
mechanisms that helps the external current . Why
Zener effect : The electric field in the depletion layer reach a point that it can
break the covalent bonds and generate electron–hole pairs.
Avalanche breakdown : The minority carriers that across the depletion layer
under the influence of the electric field gain sufficient kinetic energy to be able to
break covalent bond in atoms which they collide.
3. Light emission in semiconductor is the process of creation of a photon by
means of the annihilation of an electron-hole pair. How can we create them. Give
the necessary condition for the light emission?
h? = E
eh
greater than or equal to E
g.
Condition for light emission is excess carriers.
4.Why does the conductivity of a semi conductor change with the rise in
temperature ?
When a semi conductor is heated more & more electrons get enough energy to
jump across the forbidden energy gap from valence band to the conduction
band, where they are free to conduct electricity. Thereby increasing the
conductivity of a semi conductor.
5. On the basis of energy level diagram, identify the P-type semi conductor &
N-type semi conductor
C.B
_ _ _ _ _ _ _ _ _ _ _
V.B
.
C.B
_ _ _ _ _ _ _ _ _ _ _ _
V.B
Donor energy level
Acceptor energy level
6. A student has to study the characteristics of a P-N Junction diode. What kind
of a circuit arrangement should she use for this purpose?
7. Draw the typical shape of input characteristics likely to be obtainedby a
student . What do we understand by the forward bias and reverse bias of the
diode? In which of these states does the diode being used as a rectifier.?
8. To achieve light amplification, We should provide positive feed back in
LASER .Why?
Laser is not an amplifier but an oscillator! However, any oscillator is an amplifier
with a positive feedback. To obtain lasing , it is necessary to achieve light
amplification and provide positive optical feedback.
9. Self supporting stimulated emission is the principle of a Laser .why?
Probability of stimulated emission is proportional to the density of excess
electrons and holes , and to the density of photons. Under the normal
circumstances it is negligible. Therefore if we provide a positive feedback , the
stimulated emission can become self supporting.
11. If the active layer in a P-N photo diode is the thick depletion layer then P-N
Photodiode act very effective . Why?
In p-I-n photodiode ,due to thick i – layer the sensitivity improves
dramatically.. Large reverse biases (< 100V for Si ) may be required.
12. Modern technology use poly silicon instead of metal to form the gate. Why?
Poly silicon has high conductivity compare to metal.
15. Digiatal signal is preferred for communication Why not analog signal?Give
its waveform.
A continuous time varying wave form of a current (or) voltage is called analogue
signal.
A digital signal in a two level voltage signal (ie) “0” and “1” . Digital signals are in
the form of pulse of equal level.
16. In a given diagram ,is the diode reverse (or) forward biased?.
Reverse biased.
17.Identify the logic gate, Give its truth table and output wave form?.
NAND GATE.
18.The ratio of number of free electrons to holes n
e
/n
h
for two different materials
A and B are 1 and <1 respectively. Name the type of semi conductor to which A
and B belongs.
If n
e
/n
h =1 .
Hence A is intrinsic semi conductor.
If n
e
/n
h
<1 , n
e
<n
h
hence B is P-type.
19.Can you identify waveform. How will you convert A.C To D.C?
20. Under what conditions an amplifier can be converted in to an oscillator.Draw
a suitable diagram .
1. When feed back is positive. 2. When feed factor k is equal to l/AV
21.Using basic logic gates (NOT, OR, AND ) construct the circuit for the given
logic gate & give its truth table and wave form.?
22. Convert a Fraction from Decimal (0.625)
10
to Binary?
Hint:(0.625)
10
= (0.101)
2
23. Convert an octal number (4536) into decimal number?
(4536)
8
= 4x8
3
+ 5x8
2 +
3x8
1 +
6x8
0
= (1362)
10
24. Convert Hexa decimal (3A9F) and (2D3.5) into decimal number?
(3A9F)
16
= 3x16
3
+ 10x16
2 +
9x16
1 +
15x16
0
= 14999
10
(2D3.5)
16
= 2x16
2 +
13x16
1 +
3x16
0
+ 5x16
-1
= 723.3125
10
25. In the circuit diagram given , a volt meter is connected across a lamp ,
what changes would occur at lamp”L” and voltmeter “V:” , if the resistor R is
reduce in value? Give reason for your answer?
Page 5
SEMICONDUCTOR DEVICES
1.What is the order of energy gap in a conductor, semi conductor, and
insulator?.
Conductor - no energy gap
Semi Conductor - It is of the order of 1 ev.
Insulator - 6 ev (or) more than 6 ev.
2. Zener effect and avalanche effect are the two possible break down
mechanisms that helps the external current . Why
Zener effect : The electric field in the depletion layer reach a point that it can
break the covalent bonds and generate electron–hole pairs.
Avalanche breakdown : The minority carriers that across the depletion layer
under the influence of the electric field gain sufficient kinetic energy to be able to
break covalent bond in atoms which they collide.
3. Light emission in semiconductor is the process of creation of a photon by
means of the annihilation of an electron-hole pair. How can we create them. Give
the necessary condition for the light emission?
h? = E
eh
greater than or equal to E
g.
Condition for light emission is excess carriers.
4.Why does the conductivity of a semi conductor change with the rise in
temperature ?
When a semi conductor is heated more & more electrons get enough energy to
jump across the forbidden energy gap from valence band to the conduction
band, where they are free to conduct electricity. Thereby increasing the
conductivity of a semi conductor.
5. On the basis of energy level diagram, identify the P-type semi conductor &
N-type semi conductor
C.B
_ _ _ _ _ _ _ _ _ _ _
V.B
.
C.B
_ _ _ _ _ _ _ _ _ _ _ _
V.B
Donor energy level
Acceptor energy level
6. A student has to study the characteristics of a P-N Junction diode. What kind
of a circuit arrangement should she use for this purpose?
7. Draw the typical shape of input characteristics likely to be obtainedby a
student . What do we understand by the forward bias and reverse bias of the
diode? In which of these states does the diode being used as a rectifier.?
8. To achieve light amplification, We should provide positive feed back in
LASER .Why?
Laser is not an amplifier but an oscillator! However, any oscillator is an amplifier
with a positive feedback. To obtain lasing , it is necessary to achieve light
amplification and provide positive optical feedback.
9. Self supporting stimulated emission is the principle of a Laser .why?
Probability of stimulated emission is proportional to the density of excess
electrons and holes , and to the density of photons. Under the normal
circumstances it is negligible. Therefore if we provide a positive feedback , the
stimulated emission can become self supporting.
11. If the active layer in a P-N photo diode is the thick depletion layer then P-N
Photodiode act very effective . Why?
In p-I-n photodiode ,due to thick i – layer the sensitivity improves
dramatically.. Large reverse biases (< 100V for Si ) may be required.
12. Modern technology use poly silicon instead of metal to form the gate. Why?
Poly silicon has high conductivity compare to metal.
15. Digiatal signal is preferred for communication Why not analog signal?Give
its waveform.
A continuous time varying wave form of a current (or) voltage is called analogue
signal.
A digital signal in a two level voltage signal (ie) “0” and “1” . Digital signals are in
the form of pulse of equal level.
16. In a given diagram ,is the diode reverse (or) forward biased?.
Reverse biased.
17.Identify the logic gate, Give its truth table and output wave form?.
NAND GATE.
18.The ratio of number of free electrons to holes n
e
/n
h
for two different materials
A and B are 1 and <1 respectively. Name the type of semi conductor to which A
and B belongs.
If n
e
/n
h =1 .
Hence A is intrinsic semi conductor.
If n
e
/n
h
<1 , n
e
<n
h
hence B is P-type.
19.Can you identify waveform. How will you convert A.C To D.C?
20. Under what conditions an amplifier can be converted in to an oscillator.Draw
a suitable diagram .
1. When feed back is positive. 2. When feed factor k is equal to l/AV
21.Using basic logic gates (NOT, OR, AND ) construct the circuit for the given
logic gate & give its truth table and wave form.?
22. Convert a Fraction from Decimal (0.625)
10
to Binary?
Hint:(0.625)
10
= (0.101)
2
23. Convert an octal number (4536) into decimal number?
(4536)
8
= 4x8
3
+ 5x8
2 +
3x8
1 +
6x8
0
= (1362)
10
24. Convert Hexa decimal (3A9F) and (2D3.5) into decimal number?
(3A9F)
16
= 3x16
3
+ 10x16
2 +
9x16
1 +
15x16
0
= 14999
10
(2D3.5)
16
= 2x16
2 +
13x16
1 +
3x16
0
+ 5x16
-1
= 723.3125
10
25. In the circuit diagram given , a volt meter is connected across a lamp ,
what changes would occur at lamp”L” and voltmeter “V:” , if the resistor R is
reduce in value? Give reason for your answer?
In the given circuit emitter –base junction of N-P-N transistor is forward biased
, with battery “B”. When “r” decreases I
E
increases . Because
I
C
= I
E
– I
B
.
Therefore IC will also increase. Hence bulb will glow with more brightness and
voltmeter reading will increase.
26.Determine the current through resistance “R” in each circuit. Diodes D1 and
D2 are identical and ideal.
In circuit (i) Both D1 and D2 are forward baiased hence both will conduct
current and resistance of each diode is “0”. .Therefore I = 3/15 = 0.2 A
(ii) Diode D1 is forward bias and D2 is reverse bias, therefore resistance D1 is
“0” and resistance D2 is infinite. Hence D1 will conduct and D2 do not conduct .
No current flows in the circuit.
27.Write the output wave form of the OR gate for the inputs given?
Time
Interval
1 2 3 4 5 6 7 8
Input A 0 1 1 0 0 1 1 0
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