A common emitter amplifier has a voltage gainof 50, an input impedance...
Ohms, and an output impedance of 1 kilohm. The amplifier is biased to operate in the active region of the transistor.
To calculate the DC bias point of the amplifier, we need to use the following equations:
IB = (VCC - VBE) / RB
IC = β * IB
VCE = VCC - IC * RC
where VCC is the supply voltage, VBE is the base-emitter voltage of the transistor, RB is the base resistor, β is the transistor's current gain, IC is the collector current, and RC is the collector resistor.
Assuming VBE = 0.7V and β = 100, we can solve for the bias point:
IB = (10V - 0.7V) / RB = 9.3V / RB
IC = β * IB = 100 * 9.3V / RB = 930V / RB
VCE = 10V - IC * 1kΩ = 10V - 930V / RB * 1kΩ
Next, we can calculate the small-signal parameters of the amplifier. The voltage gain is given by:
Av = -gm * RC
where gm is the small-signal transconductance of the transistor. For a common emitter configuration, gm is given by:
gm = IC / VT
where VT is the thermal voltage, approximately 26 mV at room temperature.
Thus, gm = 930V / RB / 26mV = 35.77 / RB
Av = -35.77 * RC / RB
The input impedance is given by:
Zin = RB
The output impedance is given by:
Zout = RC
Finally, we can calculate the maximum output voltage swing before the transistor enters saturation. Since the maximum collector current is limited by the saturation current, we have:
Vout,max = VCC - IC,sat * RC
where IC,sat is the saturation current of the transistor, which is typically around 10% of the maximum collector current.
Assuming IC,max = 10 mA, we have:
IC,sat = 1 mA
Vout,max = 10V - 1 mA * 1 kΩ = 9V
Therefore, the maximum output voltage swing is 9V peak-to-peak.
A common emitter amplifier has a voltage gainof 50, an input impedance...
Power gain = (voltage gain)^2 * Ro/Ri is the correct formula