Class 12 Exam > Class 12 Questions > For transistor action :(1) Base, emitter and ...
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For transistor action :
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
- a)(3), (4)
- b)(4), (1)
- c)(1), (2)
- d)(2), (3)
Correct answer is option 'D'. Can you explain this answer?
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Verified Answer
For transistor action :(1) Base, emitter and collector regions should ...
For transistor action, the base region must
be very thin and lightly doped. Also, the
emitter-base junction is forward biased and
base-collector junction is reverse biased
be very thin and lightly doped. Also, the
emitter-base junction is forward biased and
base-collector junction is reverse biased
Most Upvoted Answer
For transistor action :(1) Base, emitter and collector regions should ...
Transistor Action:
The transistor is a three-layer semiconductor device that can amplify signals and perform other functions. The action of the transistor is based on the control of the flow of charge carriers (electrons and holes) through the device by an external voltage applied to one of the layers.
Requirements for Transistor Action:
There are some requirements that must be fulfilled for transistor action. These are:
1. Similar Size and Doping Concentrations:
In order to ensure proper operation of the transistor, the base, emitter, and collector regions should have similar size and doping concentrations. This is necessary to ensure that the transistor operates in a stable and predictable manner.
2. Thin and Lightly Doped Base Region:
The base region of the transistor must be very thin and lightly doped. This is because the base is the region where the input signal is applied and where the output signal is generated. A thin and lightly doped base region will allow for faster transistor operation and better signal amplification.
3. Forward Biased Emitter-Base Junction and Reverse Biased Base-Collector Junction:
The emitter-base junction of the transistor is forward biased, while the base-collector junction is reverse biased. This is because the forward biasing of the emitter-base junction allows for the injection of electrons into the base region, while the reverse biasing of the base-collector junction allows for the collection of these electrons at the collector.
4. Forward Biased Emitter-Base Junction and Base-Collector Junction:
Both the emitter-base junction as well as the base-collector junction are forward biased. This is incorrect as the base-collector junction must be reverse biased for the transistor to function properly.
Therefore, the correct option is (2), (3).
The transistor is a three-layer semiconductor device that can amplify signals and perform other functions. The action of the transistor is based on the control of the flow of charge carriers (electrons and holes) through the device by an external voltage applied to one of the layers.
Requirements for Transistor Action:
There are some requirements that must be fulfilled for transistor action. These are:
1. Similar Size and Doping Concentrations:
In order to ensure proper operation of the transistor, the base, emitter, and collector regions should have similar size and doping concentrations. This is necessary to ensure that the transistor operates in a stable and predictable manner.
2. Thin and Lightly Doped Base Region:
The base region of the transistor must be very thin and lightly doped. This is because the base is the region where the input signal is applied and where the output signal is generated. A thin and lightly doped base region will allow for faster transistor operation and better signal amplification.
3. Forward Biased Emitter-Base Junction and Reverse Biased Base-Collector Junction:
The emitter-base junction of the transistor is forward biased, while the base-collector junction is reverse biased. This is because the forward biasing of the emitter-base junction allows for the injection of electrons into the base region, while the reverse biasing of the base-collector junction allows for the collection of these electrons at the collector.
4. Forward Biased Emitter-Base Junction and Base-Collector Junction:
Both the emitter-base junction as well as the base-collector junction are forward biased. This is incorrect as the base-collector junction must be reverse biased for the transistor to function properly.
Therefore, the correct option is (2), (3).
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For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer?
Question Description
For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? for Class 12 2024 is part of Class 12 preparation. The Question and answers have been prepared according to the Class 12 exam syllabus. Information about For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Class 12 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer?.
For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? for Class 12 2024 is part of Class 12 preparation. The Question and answers have been prepared according to the Class 12 exam syllabus. Information about For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Class 12 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer?.
Solutions for For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for Class 12.
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Here you can find the meaning of For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer?, a detailed solution for For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? has been provided alongside types of For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice For transistor action :(1) Base, emitter and collector regions should have similar size and doping concentrations.(2) The base region must be very thin and lightly doped.(3) The eimtter-base junction is forward biased and base-collector junction is reverse based.(4) Both the emitter-base junction as well as the base-collector junction are forward biased.a)(3), (4)b)(4), (1)c)(1), (2)d)(2), (3)Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice Class 12 tests.
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