Reverse bias applied to a junction diode [2003]a)increases the minorit...
In reverse biasing, the conduction across the
p-n junction does not take place due to
majority carriers but takes place due to
minority carriers if the voltage of external
battery is large. The size of the depletion
region increases thereby increasing the
potential barrier.
View all questions of this test
Reverse bias applied to a junction diode [2003]a)increases the minorit...
Explanation:
When a p-n junction diode is reverse biased, the positive terminal of the battery is connected to the n-type material and the negative terminal is connected to the p-type material. This causes the potential difference across the junction to increase.
As a result of this reverse bias, the following changes take place:
1. Widening of Depletion Region: The reverse bias voltage attracts the majority carriers away from the junction, leaving behind more negative ions in the p-region and more positive ions in the n-region. This increases the width of the depletion region.
2. Decrease in Majority Carrier Current: As the width of the depletion region increases, the number of majority carriers (electrons in n-region and holes in p-region) available for conduction decreases. This leads to a decrease in majority carrier current.
3. Increase in Minority Carrier Current: The minority carriers (holes in n-region and electrons in p-region) which are not involved in the conduction process, move across the junction due to the increased electric field. This leads to an increase in minority carrier current.
4. Increase in Potential Barrier: The potential barrier is the energy required for the majority carriers to cross the depletion region. As the width of the depletion region increases, the potential barrier also increases. Hence, option 'C' is the correct answer.
Note: When a p-n junction diode is forward biased, the positive terminal of the battery is connected to the p-type material and the negative terminal is connected to the n-type material. This causes the potential difference across the junction to decrease, resulting in a decrease in the width of the depletion region and an increase in majority carrier current.