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In the equilibrium state the barrier, potential across a unbiased germanium diode is __________
- a)0.3 V
- b)0.7 V
- c)1.7 V
- d)0 V
Correct answer is option 'A'. Can you explain this answer?
Verified Answer
In the equilibrium state the barrier, potential across a unbiased germ...
Barrier potential is due to the charges that establish an electric field across the two junctions.
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In the equilibrium state the barrier, potential across a unbiased germ...
Equilibrium state in a Germanium Diode
In the equilibrium state, a germanium diode is unbiased, which means there is no external voltage applied to it. The barrier potential across a germanium diode can be calculated by using the following equation:
Vb = (KT/q)ln(NdNa/n2i)
where,
Vb = Barrier potential
K = Boltzmann's constant
T = Temperature (in Kelvin)
q = Charge of an electron
Nd = Donor concentration
Na = Acceptor concentration
ni = Intrinsic carrier concentration
Solution
For a germanium diode, the intrinsic carrier concentration (ni) is 2.4 x 10^13/cm^3, and the donor and acceptor concentrations are typically in the range of 10^15 to 10^17/cm^3. Assuming Nd = Na = 10^16/cm^3 and T = 300K, we can calculate the barrier potential as follows:
Vb = (KT/q)ln(NdNa/n2i)
= (1.38 x 10^-23 x 300 / 1.6 x 10^-19)ln(10^16 x 10^16 / (2.4 x 10^13)^2)
= 0.3 V
Therefore, the barrier potential across an unbiased germanium diode in the equilibrium state is 0.3 V.
In the equilibrium state, a germanium diode is unbiased, which means there is no external voltage applied to it. The barrier potential across a germanium diode can be calculated by using the following equation:
Vb = (KT/q)ln(NdNa/n2i)
where,
Vb = Barrier potential
K = Boltzmann's constant
T = Temperature (in Kelvin)
q = Charge of an electron
Nd = Donor concentration
Na = Acceptor concentration
ni = Intrinsic carrier concentration
Solution
For a germanium diode, the intrinsic carrier concentration (ni) is 2.4 x 10^13/cm^3, and the donor and acceptor concentrations are typically in the range of 10^15 to 10^17/cm^3. Assuming Nd = Na = 10^16/cm^3 and T = 300K, we can calculate the barrier potential as follows:
Vb = (KT/q)ln(NdNa/n2i)
= (1.38 x 10^-23 x 300 / 1.6 x 10^-19)ln(10^16 x 10^16 / (2.4 x 10^13)^2)
= 0.3 V
Therefore, the barrier potential across an unbiased germanium diode in the equilibrium state is 0.3 V.
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