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Select the correct statement(s).
  • a)
    When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formed
  • b)
    When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formed
  • c)
    In n-type semiconductor, increase in conductivity is due to the negatively charged electrons
  • d)
    In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric field
Correct answer is option 'A,B,C,D'. Can you explain this answer?
Verified Answer
Select the correct statement(s).a)When silicon is doped with a group 1...
 (a,b,c,d)
Si ( 1 4 ) - [Ne] 3s2 3p2 (group 14 element having four valence electrons). Thus, each atom of Si is covalently bonded to four neighbouring atoms.
 3 (five valence electrons
Group 15 elements Four electrons are involved in bonding with | four electrons of Si and one remaining electron becomes I delocalised and increases the conductivity of Si. Thus, increase in I the conductivity is due to doped negatively charged electron. This is called n-type semiconductor.
 
Group 13 elements
[B, Al, Ga] ns2np1 In this case, B, Al or Ga is short of one electron (as compared to Si). This is called electron hole or electron vacancy. Under the influence of electric field, electron hole moves towards the positively charged plate and is called p -type semiconductor.
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Most Upvoted Answer
Select the correct statement(s).a)When silicon is doped with a group 1...
Introduction:
Doping is the process of adding impurity atoms to a semiconductor material in order to alter its electrical conductivity. Silicon is a commonly used semiconductor material, and its properties can be modified by doping it with different elements from group 13 and group 15 of the periodic table.

Explanation:

a) When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formed:
- Group 15 elements have 5 valence electrons. When they are doped into silicon, they replace some of the silicon atoms in the crystal lattice.
- The extra valence electron of the group 15 element does not form a covalent bond with neighboring silicon atoms, resulting in a loosely bound electron.
- These loosely bound electrons are called donor electrons and are responsible for the increased conductivity in the doped silicon.
- Since the donor electrons are negatively charged, this type of semiconductor is called an n-type semiconductor.

b) When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formed:
- Group 13 elements have 3 valence electrons. When they are doped into silicon, they replace some of the silicon atoms in the crystal lattice.
- The absence of a valence electron creates a "hole" in the crystal lattice, which can accept an electron from a neighboring atom.
- These electron-deficient sites, or holes, act as positive charge carriers and contribute to the increased conductivity in the doped silicon.
- Since the holes are positively charged, this type of semiconductor is called a p-type semiconductor.

c) In n-type semiconductor, increase in conductivity is due to the negatively charged electrons:
- In an n-type semiconductor, the conductivity is primarily due to the presence of the extra valence electrons from the group 15 dopant atoms.
- These donor electrons are loosely bound and can move freely in the crystal lattice, contributing to the flow of electric current.
- The increased concentration of negatively charged electrons results in a higher conductivity compared to pure silicon.

d) In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric field:
- In a p-type semiconductor, the conductivity is mainly due to the movement of electrons from one hole to another.
- When an electric field is applied, the electrons in the crystal lattice move towards the positively charged plate.
- The holes, which act as positive charge carriers, facilitate the movement of electrons by accepting them from neighboring atoms.
- This movement of electrons through holes contributes to the flow of electric current in a p-type semiconductor.

Conclusion:
In summary, when silicon is doped with group 15 elements, it becomes an n-type semiconductor due to the presence of donor electrons. Conversely, when doped with group 13 elements, it becomes a p-type semiconductor due to the presence of electronic holes. The increased conductivity in n-type semiconductors is due to the negatively charged electrons, while in p-type semiconductors, the electrons move through electronic holes under the influence of an electric field.
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Select the correct statement(s).a)When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formedb)When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formedc)In n-type semiconductor, increase in conductivity is due to the negatively charged electronsd)In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric fieldCorrect answer is option 'A,B,C,D'. Can you explain this answer?
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Select the correct statement(s).a)When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formedb)When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formedc)In n-type semiconductor, increase in conductivity is due to the negatively charged electronsd)In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric fieldCorrect answer is option 'A,B,C,D'. Can you explain this answer? for Class 12 2024 is part of Class 12 preparation. The Question and answers have been prepared according to the Class 12 exam syllabus. Information about Select the correct statement(s).a)When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formedb)When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formedc)In n-type semiconductor, increase in conductivity is due to the negatively charged electronsd)In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric fieldCorrect answer is option 'A,B,C,D'. Can you explain this answer? covers all topics & solutions for Class 12 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Select the correct statement(s).a)When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formedb)When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formedc)In n-type semiconductor, increase in conductivity is due to the negatively charged electronsd)In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric fieldCorrect answer is option 'A,B,C,D'. Can you explain this answer?.
Solutions for Select the correct statement(s).a)When silicon is doped with a group 15 elements (P or As), n-type semiconductor is formedb)When silicon is doped with a group 13 elements (B, Al, Ga), p-type semiconductor is formedc)In n-type semiconductor, increase in conductivity is due to the negatively charged electronsd)In p-type semiconductor, electrons move towards the positively charged plate through electronic holes under the influence of electric fieldCorrect answer is option 'A,B,C,D'. Can you explain this answer? in English & in Hindi are available as part of our courses for Class 12. Download more important topics, notes, lectures and mock test series for Class 12 Exam by signing up for free.
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