A Schottky diode is a majority carrier device.

Schottky diodes are named after the German physicist Walter H. Schottky and are also known as Schottky barrier diodes or hot carrier diodes. They are made of a metal-semiconductor junction instead of the typical P-N junction found in regular diodes. The metal used is typically a low work function metal, such as aluminum or platinum, while the semiconductor is usually n-type silicon.

Schottky diodes are majority carrier devices because their operation is primarily determined by the majority carriers in the semiconductor material. In n-type semiconductors, the majority carriers are electrons. When a forward bias voltage is applied across the metal-semiconductor junction, electrons from the n-type semiconductor flow towards the metal, creating a current. This is the main mechanism of conduction in Schottky diodes.

The absence of a P-N junction in Schottky diodes eliminates the slow recovery time associated with regular diodes. This makes Schottky diodes fast recovery diodes, which means they can switch on and off quickly. Due to their fast switching capabilities, Schottky diodes are commonly used in applications that require high-speed rectification, such as in power supplies and RF circuits.

In summary, a Schottky diode is a majority carrier device because its operation is primarily determined by the majority carriers in the semiconductor material. It is a fast recovery diode due to its quick switching capabilities, which makes it suitable for applications requiring high-speed rectification.