A currentiis passed through a silver strip of width d and area of cross-section A. The number of free electrons per unit volume is n. What will be the potential difference developed across the width of the conductor due to the electron accumulation ? The appearance of a transverse emf, when a current - carrying wire is placed in a magnetic field, is called Hall effect.a)b)c)d)Correct answer is option 'D'. Can you explain this answer?

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A current i is passed through a silver strip of width d and area of cross-section A. The number of free electrons per unit volume is n.

What will be the potential difference developed across the width of the conductor due to the electron accumulation ? The appearance of a transverse emf, when a current - carrying wire is placed in a magnetic field, is called Hall effect.

Correct answer is option 'D'. Can you explain this answer?

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A currentiis passed through a silver strip of width d and area of cross-section A. The number of free electrons per unit volume is n. Due to the magnetic force, the free electrons get accumulated on one side of the conductor along its length. This produces a transverse electric field in the conductor which opposes the magnetic force on the electrons. Find the magnitude of the electric field which will stop further accumulation of electrons.

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Read the following text and answer the following questions on the basis of the same:Band theory of solid:Consider that the Si or Ge crystal contains N atoms. Electrons of each atom will have discrete energies in different orbits. The electron energy will be same if all the atoms are isolated, i.e., separated from each other by a large distance. However, in a crystal, the atoms are close to each other (2 Å to 3 Å) and therefore the electrons interact with each other and also with the neighbouring atomic cores. The overlap (or interaction) will be more felt by the electrons in the outermost orbit while the inner orbit or core electron energies may remain unaffected. Therefore, for understanding electron energies in Si or Ge crystal, we need to consider the changes in the energies of the electrons in the outermost orbit only. For Si, the outermost orbit is the third orbit (n = 3), while for Ge it is the fourth orbit (n = 4). The number of electrons in the outermost orbit is 4 (2s and 2p electrons). Hence, the total number of outer electrons in the crystal is 4N. The maximum possible number of outer electrons in the orbit is 8 (2s + 6p electrons). So, out of the 4N electrons, 2N electrons are in the 2N s-states (orbital quantum number l = 0) and 2N electrons are in the available 6N p-states. Obviously, some p-electron states are empty. This is the case of well separated or isolated atoms.Q. The overlap (or interaction) will be more felt by the electrons when they are

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Read the following text and answer the following questions on the basis of the same:Band theory of solid:Consider that the Si or Ge crystal contains N atoms. Electrons of each atom will have discrete energies in different orbits. The electron energy will be same if all the atoms are isolated, i.e., separated from each other by a large distance. However, in a crystal, the atoms are close to each other (2 Å to 3 Å) and therefore the electrons interact with each other and also with the neighbouring atomic cores. The overlap (or interaction) will be more felt by the electrons in the outermost orbit while the inner orbit or core electron energies may remain unaffected. Therefore, for understanding electron energies in Si or Ge crystal, we need to consider the changes in the energies of the electrons in the outermost orbit only. For Si, the outermost orbit is the third orbit (n = 3), while for Ge it is the fourth orbit (n = 4). The number of electrons in the outermost orbit is 4 (2s and 2p electrons). Hence, the total number of outer electrons in the crystal is 4N. The maximum possible number of outer electrons in the orbit is 8 (2s + 6p electrons). So, out of the 4N electrons, 2N electrons are in the 2N s-states (orbital quantum number l = 0) and 2N electrons are in the available 6N p-states. Obviously, some p-electron states are empty. This is the case of well separated or isolated atoms.Q. For Silicon and Germanium the outermost orbits are respectively

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Read the following text and answer the following questions on the basis of the same:Electron Microscope Electron microscopes use electrons to illuminate a sample. In Transmission Electron Microscopy (TEM), electrons pass through the sample and illuminate film or a digital camera.Resolution in microscopy is limited to about half of the wavelength of the illumination source used to image the sample. Using visible light the best resolution that can be achieved by microscopes is about ~200 nm. Louis de Broglie showed that every particle or matter propagates like a wave. The wavelength of propagating electrons at a given accelerating voltage can be determined byThus, the wavelength of electrons is calculated to be 3.88 pm when the microscope is operated at 100 keV, 2. 74 pm at 200 keV and 2.24 pm at 300 keV. However, because the velocities of electrons in an electron microscope reach about 70% the speed of light with an accelerating voltage of 200 keV, there are relativistic effects on these electrons. Due to this effect, the wavelength at 100 keV, 200 keV and 300 keV in electron microscopes is 3.70 pm, 2.51 pm and 1.96 pm, respectively.Anyhow, the wavelength of electrons is much smaller than that of photons (2.5 pm at 200 keV). Thus if electron wave is used to illuminate the sample, the resolution of an electron microscope theoretically becomes unlimited. Practically, the resolution is limited to ~0.1 nm due to the objective lens system in electron microscopes. Thus, electron microscopy can resolve subcellular structures that could not be visualized using standard fluorescences microscopy.Q. As the accelerating voltage increases, the wavelength of electron as wave

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Read the following text and answer the following questions on the basis of the same:Band theory of solid:Consider that the Si or Ge crystal contains N atoms. Electrons of each atom will have discrete energies in different orbits. The electron energy will be same if all the atoms are isolated, i.e., separated from each other by a large distance. However, in a crystal, the atoms are close to each other (2 Å to 3 Å) and therefore the electrons interact with each other and also with the neighbouring atomic cores. The overlap (or interaction) will be more felt by the electrons in the outermost orbit while the inner orbit or core electron energies may remain unaffected. Therefore, for understanding electron energies in Si or Ge crystal, we need to consider the changes in the energies of the electrons in the outermost orbit only. For Si, the outermost orbit is the third orbit (n = 3), while for Ge it is the fourth orbit (n = 4). The number of electrons in the outermost orbit is 4 (2s and 2p electrons). Hence, the total number of outer electrons in the crystal is 4N. The maximum possible number of outer electrons in the orbit is 8 (2s + 6p electrons). So, out of the 4N electrons, 2N electrons are in the 2N s-states (orbital quantum number l = 0) and 2N electrons are in the available 6N p-states. Obviously, some p-electron states are empty. This is the case of well separated or isolated atoms.Q. The maximum possible electrons in an orbit is

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A currentiis passed through a silver strip of width d and area of cross-section A. The number of free electrons per unit volume is n. What will be the potential difference developed across the width of the conductor due to the electron accumulation ? The appearance of a transverse emf, when a current - carrying wire is placed in a magnetic field, is called Hall effect.a)b)c)d)Correct answer is option 'D'. Can you explain this answer?

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