Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > Thermal runaway is not possible in FET becaus...
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Thermal runaway is not possible in FET because as the temperature increases
- a)mobility decreases
- b)transconductance increases
- c)drain current increases
- d)none of these
Correct answer is option 'A'. Can you explain this answer?
Verified Answer
Thermal runaway is not possible in FET because as the temperature incr...
Concept:
(1) The thermal runway is not possible in FET because as the temperature of the FET increases, the mobility decreases, i.e. if the Temperature (T) ↑, the carries Mobility (μn or μp) ↓, and Ips↓
(2) Since the current is decreasing with an increase in temperature, the power dissipation at the output terminal of a FET decreases or we can say that it’s minimum.
So, there will be no Question of thermal Runway at the output of the FET.
Most Upvoted Answer
Thermal runaway is not possible in FET because as the temperature incr...
Concept:
(1) The thermal runway is not possible in FET because as the temperature of the FET increases, the mobility decreases, i.e. if the Temperature (T) ↑, the carries Mobility (μn or μp) ↓, and Ips↓
(2) Since the current is decreasing with an increase in temperature, the power dissipation at the output terminal of a FET decreases or we can say that it’s minimum.
So, there will be no Question of thermal Runway at the output of the FET.
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Thermal runaway is not possible in FET because as the temperature increasesa)mobility decreasesb)transconductance increasesc)drain current increasesd)none of theseCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Thermal runaway is not possible in FET because as the temperature increasesa)mobility decreasesb)transconductance increasesc)drain current increasesd)none of theseCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Thermal runaway is not possible in FET because as the temperature increasesa)mobility decreasesb)transconductance increasesc)drain current increasesd)none of theseCorrect answer is option 'A'. Can you explain this answer?.
Thermal runaway is not possible in FET because as the temperature increasesa)mobility decreasesb)transconductance increasesc)drain current increasesd)none of theseCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Thermal runaway is not possible in FET because as the temperature increasesa)mobility decreasesb)transconductance increasesc)drain current increasesd)none of theseCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Thermal runaway is not possible in FET because as the temperature increasesa)mobility decreasesb)transconductance increasesc)drain current increasesd)none of theseCorrect answer is option 'A'. Can you explain this answer?.
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