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A FET circuit has a transconductance of 2500 µ seconds and drain resistance equals to 10Kohms than voltage gain will be __________
  • a)
    20
  • b)
    25
  • c)
    30
  • d)
    35
Correct answer is option 'B'. Can you explain this answer?
Verified Answer
A FET circuit has a transconductance of 2500 µ seconds and drain...
The transconductance, gm is defined as
gm = ΔID / ΔVGS
so gm = Voltage gain / RD
Therefore, voltage gain = gm x  RD
= 2500 x 10-6 x 10 x 103
= 25.
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Most Upvoted Answer
A FET circuit has a transconductance of 2500 µ seconds and drain...
The transconductance, gm is defined as
gm = ΔID / ΔVGS
so gm = Voltage gain / RD
Therefore, voltage gain = gm x  RD
= 2500 x 10-6 x 10 x 103
= 25.
Free Test
Community Answer
A FET circuit has a transconductance of 2500 µ seconds and drain...
Calculation of Voltage Gain in FET Circuit:
1. Given:
- Transconductance (gm) = 2500 µS = 2.5 mS
- Drain resistance (RD) = 10 kΩ = 10000 Ω
2. Formula for Voltage Gain (Av):
Av = -gm * RD
3. Calculation:
Av = -2.5 mS * 10 kΩ
Av = -25
4. Result:
Therefore, the voltage gain of the FET circuit is 25.

Explanation:
The voltage gain of a FET circuit is determined by the product of the transconductance (gm) and the drain resistance (RD). In this case, with a transconductance of 2500 µS (2.5 mS) and a drain resistance of 10 kΩ, the voltage gain is calculated to be -25. The negative sign indicates that the output signal is inverted with respect to the input signal. Hence, the correct answer is option 'B' with a voltage gain of 25.
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