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Application of a forward bias to a p-n junction
  • a)
    widens the depletion zone
  • b)
    increases the no. of donors on the n-side
  • c)
    increases the electric field in the depletion zone
  • d)
    increases the potential difference across the depletion zone
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
Application of a forward bias to a p-n junctiona)widens the depletion ...
Application of a Forward Bias to a p-n junction

When a forward bias is applied to a p-n junction, the following happens:

1. Electrons flow from the n-type semiconductor to the p-type semiconductor.
2. Holes flow from the p-type semiconductor to the n-type semiconductor.
3. The depletion zone decreases in size.
4. The number of donors on the n-side increases.
5. The number of acceptors on the p-side decreases.
6. The potential barrier decreases.
7. The potential difference across the depletion zone decreases.

Explanation of the Correct Answer

When a forward bias is applied to a p-n junction, the number of donors on the n-side increases. This is because the forward bias attracts electrons from the n-type semiconductor to the p-type semiconductor. This increase in the number of donors on the n-side reduces the width of the depletion zone.

The depletion zone is the region around the p-n junction where there are no free charge carriers. It is created by the diffusion of electrons from the n-type semiconductor and holes from the p-type semiconductor. When a forward bias is applied to the p-n junction, the depletion zone decreases in size because the number of free electrons on the n-side increases.

The electric field in the depletion zone does not increase when a forward bias is applied to a p-n junction. Instead, it decreases because the potential barrier across the depletion zone decreases. The potential barrier is the energy required to move an electron from the n-type semiconductor to the p-type semiconductor. When a forward bias is applied, the potential barrier decreases, which means that it is easier for electrons to move from the n-type semiconductor to the p-type semiconductor.

Conclusion

In conclusion, the correct answer is option 'B' because the application of a forward bias to a p-n junction increases the number of donors on the n-side of the junction, which reduces the width of the depletion zone. The electric field in the depletion zone decreases, and the potential barrier across the depletion zone decreases.
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Application of a forward bias to a p-n junctiona)widens the depletion zoneb)increases the no. of donors on the n-sidec)increases the electric field in the depletion zoned)increases the potential difference across the depletion zoneCorrect answer is option 'B'. Can you explain this answer?
Question Description
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