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DC Biasing BJTs (Part - 2) - Electrical Engineering (EE) PDF Download

Improved bias stability

  • Addition of emitter resistance makes the dc bias currents and voltages remain closer to their set value even with variation in – transistor beta – temperature

Stability

In a fixed bias circuit, IB does not vary with b and therefore whenever there is an increase in b, IC increases proportionately, and thus VCE reduces making the Q point to drift towards saturation.In an emitter bias circuit, As b increases, IB reduces, maintaining almost same IC and VCE thus stabilizing the Q point against b variations.

Saturation current

In saturation VCE is almost 0V, thus
VCC = IC ( RC + RE )
Thus, saturation current
IC,sat = VCC / ( RC + RE )

Load line analysis

The two extreme points on the load line of an emitter bias circuit are,

(0, VCC / [ RC + RE ]) on the Y axis, and ( VCC, 0) on the X axis.

Voltage divider bias

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

This is the biasing circuit wherein, ICQ and VCEQ are almost independent of b.
The level of IBQ will change with β so as to maintain the values of ICQ and VCEQ almost same, thus maintaining the stability of Q point.
Two methods of analyzing a voltage divider bias circuit are:

Exact method – can be applied to any voltage divider circuit

Approximate method – direct method, saves time and energy, can be applied in most of the circuits.


Exact method

In this method, the Thevenin equivalent network for the network to the left of the base terminal to be found.

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

To find Rth:

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

From the above circuit,

Rth = R1| | R2

= R1 R2 / (R1 + R2)

 

To find Eth

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

From the above circuit,

Eth = VR2 = R2VCC / (R1 + R2)

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

In the above network, applying KVL

( Eth – VBE) = IB [ Rth +( β + 1) RE ]

IB = ( Eth – VBE) / [ Rth +( β + 1) RE ]


Analysis of Output loop 

KVL to the output loop:
VCC = ICRC + VCE + IERE
IE ≌ IC
Thus, VCE = VCC – IC (RC + RE)

Note that this is similar to emitter bias circuit.


Problem

For the circuit given below, find IC and VCE.
Given the values of R1, R2, RC, RE and β = 140 and VCC = 18V.
For the purpose of DC analysis, all the capacitors in the amplifier circuit are opened.

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Solution

Considering exact analysis:

1. Let us find Rth = R1| | R2
= R1 R2 / (R1 + R2) = 3.55K

2. Then find Eth = VR2 = R2VCC / (R1 + R2) = 1.64V

3. Then find IB
IB = ( Eth – VBE) / [ Rth +( β + 1) RE ] = 4.37mA

4. Then find IC = b IB = 0.612mA

5. Then find VCE = VCC – I(RC + RE) = 12.63V

 

Approximate analysis:

The input section of the voltage divider configuration can be represented by the network shown in the next slide.

Input Network

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

The emitter resistance RE is seen as (β+1)RE at the input loop.
If this resistance is much higher compared to R2, then the current IB is much smaller than I2 through R2.
This means, R>> R2
OR
(β+1)RE ≥10R2
OR
bRE ≥ 10R2
This makes IB to be negligible.
Thus I1 through R1 is almost same as the current I2 through R2.
Thus R1 and R2 can be considered as in series.
Voltage divider can be applied to find the voltage across R2 ( VB) VB = VCCR2 / ( R1 + R2)
Once VB is determined, VE is calculated as, VE = V– VBE
After finding VE, IE is calculated as, IE = VE / RE
IE ≌ IC
VCE = VCC – IC ( RC + R,)

 

Problem 

Given: VCC = 18V, R1 = 39k Ω, R2 = 3.9k W, R= 4k Ω, RE = 1.5k Ω and β = 140.
Analyse the circuit using approximate technique.
In order to check whether approximate technique can be used, we need to verify the condition,
βRE ≥ 10R2
Here,
βRE = 210 kΩ and 10R= 39 kΩ
Thus the condition
βRE ≥ 10R2 satisfied
Solution

  • Thus approximate technique can be applied.
    1. Find VB = VCCR2 / ( R1 + R2) = 1.64V
    2. Find VE = VB – 0.7 = 0.94V
    3. Find IE = VE / RE = 0.63mA = I
    4. Find VCE = VCC – IC(RC + RE) = 12.55V 

Comparison

Exact AnalysisApproximate Analysis
IC = 0.612mAIC = 0.63mA
VCE = 12.63VVCE = 12.55V

Both the methods result in the same values for IC and VCE since the condition bRE ≥ 10R2 is satisfied.
It can be shown that the results due to exact analysis and approximate analysis have more deviation if the above mentioned condition is not satisfied.
For load line analysis of voltage divider network, Ic,max = VCC/ ( RC+RE) when VCE = 0V and VCE max = VCC when IC = 0.

DC bias with voltage feedback

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Input loop

DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Applying KVL for Input Loop: VCC = IC1RC + IBRB + VBE + IERE

Substituting for IE as (β +1)IB and solving for IB, IB = ( VCC – VBE) / [ RB + β( RC + RE)]

Output loop

 DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Neglecting the base current, KVL to the output loop results in,

VCE = VCC – IC ( RC + RE)

DC bias with voltage feedback

DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Input loop

DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Applying KVL to input loop:

VCC = IC|RC + IBRB + VBE + IERE
IC|≌ IC and IC ≌ IE
Substituting for IE as (β +1)IB [ or as βIB] and solving for
IB, IB = ( VCC - VBE) / [ R+ β( RC + RE)]

Output loop

DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Neglecting the base current, and applying KVL to the output loop results in,

VCE = VCC – IC ( RC + RE)

In this circuit, improved stability is obtained by introducing a feedback path from collector to base.

Sensitivity of Q point to changes in beta or temperature variations is normally less than that encountered for the fixed bias or emitter biased configurations.

Problem: Given: VCC = 10V, RC = 4.7k, RB = 250W and RE = 1.2k. b = 90.

Analyze the circuit.

IB = ( VCC – VBE) / [ RB + β( RC + RE)]
=  11.91mA

IC = (b IB ) = 1.07mA VCE = VCC – I( RC + RE)  = 3.69V

In the above circuit, Analyze the circuit if b = 135 ( 50% increase).

With the same procedure as followed in the previous problem, we get  

  • IB = 8.89mA  
  • I= 1.2mA
  • VCE = 2.92V  

50% increase in b resulted in 12.1% increase in IC and 20.9% decrease in VCEQ

Problem 2:

Determine the DC level of IB and VC for the network shown:

DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

Solution: 

Open all the capacitors for DC analysis.
RB = 91 kΩ + 110 kΩ = 201k IB = ( VCC – VBE) / [ RB + β( RC + RE)]
= (18 – 0.7) / [ 201k + 75( 3.3+0.51)] = 35.5mA 
IC = β IB = 2.66mA VCE = VCC – (ICRC)
= 18 – ( 2.66mA)(3.3k) = 9.22V 

Load line analysis 

The two extreme points of the load line IC,max and VCE, max are found in the same as a voltage divider circuit.
IC,max = VCC / (RC + RE) – Saturation current
VCE, max – Cut off voltage

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FAQs on DC Biasing BJTs (Part - 2) - Electrical Engineering (EE)

1. What is DC biasing in BJTs?
Ans. DC biasing in BJTs refers to the process of setting the operating point or the quiescent point of the transistor. It involves applying a DC voltage or current to the base terminal of the transistor to ensure that it operates in the desired active region.
2. Why is DC biasing necessary in BJTs?
Ans. DC biasing is necessary in BJTs to ensure stable and proper transistor operation. It helps to establish the correct biasing conditions for the transistor, which affects its current gain, linearity, and overall performance. Without proper biasing, the transistor may operate in an unstable or undesirable region, leading to distortion or malfunction.
3. How is DC biasing achieved in BJTs?
Ans. DC biasing in BJTs can be achieved by using various biasing techniques such as fixed bias, emitter bias, collector feedback bias, and voltage divider bias. These techniques involve using resistors, capacitors, and DC voltage sources to establish the desired operating point for the transistor.
4. What is the purpose of a bias resistor in DC biasing?
Ans. A bias resistor is used in DC biasing to control the base current of the transistor and set the desired operating point. It acts as a current limiter and helps to stabilize the transistor's biasing conditions. The value of the bias resistor determines the amount of base current flowing into the transistor, which in turn affects its collector current and overall operation.
5. What are the advantages of DC biasing in BJTs?
Ans. DC biasing in BJTs offers several advantages. It helps to stabilize the transistor's operating point, ensuring consistent performance over temperature and component variations. It also allows for improved linearity and reduces distortion in transistor amplifiers. Additionally, DC biasing facilitates proper biasing conditions for bias-dependent parameters such as hFE (current gain) and VBE (base-emitter voltage).
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