Open App

JEE Exam > JEE Notes > Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE PDF Download

Download, print and study this document offline

Please wait while the PDF view is loading

 Page 1


DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
1 
1. COMMON EMITTER TRANSISTOR 
CHARACTERISTICS 
Aim: 
 1. To plot the input and output static characteristics. 
 2. To calculate the input dynamic resistance from the input characteristics 
and output dynamic resistance and current gain from the output 
characteristics of the given transistor. 
 
Apparatus Required: 
S.No 
Name of the 
Equipment/Component 
Specifications Quantity 
1 Transistor (BC 107) 
I
cmax
=100mA 
P
D
=300mw 
V
ceo
=45V 
V
beo
=50V 
1 
2 Resistors-39K?,1K? 
Power rating=0.5w 
Carbon type 
 1 
3 Regulated Power Supply 0-30V,1A 1 
4 Volt meters 0-1V, 0-10V 1 
5 Ammeters 0-300µA, 0-10mA 1 
 
Theory: 
In common emitter configuration the emitter is common to both input and output. 
For normal operation the Base-Emitter junction is forward biased and base-
collector junction is reveres biased .The input characteristics are plotted between 
I
B
 and V
BE
 keeping the voltage V
CE
 constant. This characteristic is very similar to 
that of a forward biased diode. The input dynamic resistance is calculated using 
the formula 
                    r
i
    =   ? V
BE
 / ? I
B
  at constant V
CE
 
 
The output characteristics are plotted between I
C
 and V
CE
 keeping I
B
 constant. 
These curves are almost horizontal. The output dynamic resistance is given by,  
                   r
o
    =    ?V
CE 
/   ? I
C
   at constant I
B
 
At a given operating point, we define DC and AC current gains (beta) as follows 
                DC current gain ß
dc 
= I
C 
/ I
B
        at constant V
CE
 
Page 2


DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
1 
1. COMMON EMITTER TRANSISTOR 
CHARACTERISTICS 
Aim: 
 1. To plot the input and output static characteristics. 
 2. To calculate the input dynamic resistance from the input characteristics 
and output dynamic resistance and current gain from the output 
characteristics of the given transistor. 
 
Apparatus Required: 
S.No 
Name of the 
Equipment/Component 
Specifications Quantity 
1 Transistor (BC 107) 
I
cmax
=100mA 
P
D
=300mw 
V
ceo
=45V 
V
beo
=50V 
1 
2 Resistors-39K?,1K? 
Power rating=0.5w 
Carbon type 
 1 
3 Regulated Power Supply 0-30V,1A 1 
4 Volt meters 0-1V, 0-10V 1 
5 Ammeters 0-300µA, 0-10mA 1 
 
Theory: 
In common emitter configuration the emitter is common to both input and output. 
For normal operation the Base-Emitter junction is forward biased and base-
collector junction is reveres biased .The input characteristics are plotted between 
I
B
 and V
BE
 keeping the voltage V
CE
 constant. This characteristic is very similar to 
that of a forward biased diode. The input dynamic resistance is calculated using 
the formula 
                    r
i
    =   ? V
BE
 / ? I
B
  at constant V
CE
 
 
The output characteristics are plotted between I
C
 and V
CE
 keeping I
B
 constant. 
These curves are almost horizontal. The output dynamic resistance is given by,  
                   r
o
    =    ?V
CE 
/   ? I
C
   at constant I
B
 
At a given operating point, we define DC and AC current gains (beta) as follows 
                DC current gain ß
dc 
= I
C 
/ I
B
        at constant V
CE
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
2 
                AC current gain ß
ac 
= ? I
C
/ ? I
B
   at constant V
CE. 
 
Circuit diagram: 
 
Fig A: Transistor Common Emitter Configuration 
Procedure: 
a) Input Characteristics: 
1. Connect the circuit as shown in fig A. 
2. Keep the voltage V
CE
 as constant at 2V by varying V
CC
. 
3. Vary the input voltage, V
BB
 in steps of 1V up to 10V 
4. Measure the voltage, V
BE
 from voltmeter and current, I
B
 through the 
ammeter for different values of input voltages 
5. Repeat the step 3 and 4 for V
CE  
values of 5V and 10V 
6. Draw input static characteristics for tabulated values 
7. At suitable operating point, calculate input dynamic resistance. 
     b) Output Characteristics: 
1. Fix input base current, I
B
 at constant value say at 10µA. 
2. Vary the output voltage, V
CC
 in steps of 1V from 0V up to10V. 
3. Measure the voltage, V
CE
 from voltmeter and current I
C
 through the 
ammeter for different values. 
4. Repeat above steps 2and 3 for various values of I
B
=20µA and 30µA. 
5. Draw output static characteristics for tabulated values 
 
 
 
 
Page 3


DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
1 
1. COMMON EMITTER TRANSISTOR 
CHARACTERISTICS 
Aim: 
 1. To plot the input and output static characteristics. 
 2. To calculate the input dynamic resistance from the input characteristics 
and output dynamic resistance and current gain from the output 
characteristics of the given transistor. 
 
Apparatus Required: 
S.No 
Name of the 
Equipment/Component 
Specifications Quantity 
1 Transistor (BC 107) 
I
cmax
=100mA 
P
D
=300mw 
V
ceo
=45V 
V
beo
=50V 
1 
2 Resistors-39K?,1K? 
Power rating=0.5w 
Carbon type 
 1 
3 Regulated Power Supply 0-30V,1A 1 
4 Volt meters 0-1V, 0-10V 1 
5 Ammeters 0-300µA, 0-10mA 1 
 
Theory: 
In common emitter configuration the emitter is common to both input and output. 
For normal operation the Base-Emitter junction is forward biased and base-
collector junction is reveres biased .The input characteristics are plotted between 
I
B
 and V
BE
 keeping the voltage V
CE
 constant. This characteristic is very similar to 
that of a forward biased diode. The input dynamic resistance is calculated using 
the formula 
                    r
i
    =   ? V
BE
 / ? I
B
  at constant V
CE
 
 
The output characteristics are plotted between I
C
 and V
CE
 keeping I
B
 constant. 
These curves are almost horizontal. The output dynamic resistance is given by,  
                   r
o
    =    ?V
CE 
/   ? I
C
   at constant I
B
 
At a given operating point, we define DC and AC current gains (beta) as follows 
                DC current gain ß
dc 
= I
C 
/ I
B
        at constant V
CE
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
2 
                AC current gain ß
ac 
= ? I
C
/ ? I
B
   at constant V
CE. 
 
Circuit diagram: 
 
Fig A: Transistor Common Emitter Configuration 
Procedure: 
a) Input Characteristics: 
1. Connect the circuit as shown in fig A. 
2. Keep the voltage V
CE
 as constant at 2V by varying V
CC
. 
3. Vary the input voltage, V
BB
 in steps of 1V up to 10V 
4. Measure the voltage, V
BE
 from voltmeter and current, I
B
 through the 
ammeter for different values of input voltages 
5. Repeat the step 3 and 4 for V
CE  
values of 5V and 10V 
6. Draw input static characteristics for tabulated values 
7. At suitable operating point, calculate input dynamic resistance. 
     b) Output Characteristics: 
1. Fix input base current, I
B
 at constant value say at 10µA. 
2. Vary the output voltage, V
CC
 in steps of 1V from 0V up to10V. 
3. Measure the voltage, V
CE
 from voltmeter and current I
C
 through the 
ammeter for different values. 
4. Repeat above steps 2and 3 for various values of I
B
=20µA and 30µA. 
5. Draw output static characteristics for tabulated values 
 
 
 
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
3 
Tabular forms: 
a) Input Characteristics: 
V
CE  
=  2V V
CE  
=  5V V
CE  
=  10V  
S.No 
 
Applied 
Voltage 
V
BB
(V) 
V
BE
(V) I
B
(µA) V
BE
(V) I
B
(µA) V
BE
(V) I
B
(µA) 
1 0 0 0 0 0 0 0 
2 0.2 0.258 0 0.279 0 0.231 0 
3 0.4 0.461 35 0.460 45 0.474 40 
4 0.6 0.562 60 0.620 60 0.592 60 
5 0.8 0.609 90 0.629 90 0.620 90 
6 1.0 0.625 110 0.670 110 0.662 110 
7 2.0 0.648 140 0.679 140 0.682 140 
8 3.0 0.654 160 0.681 160 0.692 160 
9 4.0 0.669 190 0.684 185 0.724 190 
10 5.0 0.690 210 0.689 210 0.726 218 
 
b) Output Characteristics: 
I
B  
=  10µA I
B  
=  20µA I
B  
=  30µA  
S. 
No 
 
Applied 
voltage 
Vcc (V) 
V
CE
(V) I
C
(mA) V
CE
 (V) I
C
(mA) V
CE
 (V) I
C
(mA) 
1 0 0 0 0 0 0 0 
2 0.2 0.02 0 0.02 0 0.02 0 
3 0.4 0.06 0 0.05 0 0.04 0 
4 0.6 0.08 1.0 0.08 2.2 0.05 2.6 
5 0.7 0.1 3.2 0.09 4.5 0.06 4.6 
6 0.8 0.12 5.0 0.1 6.2 0.07 6.5 
7 1.0 0.21 6.2 0.15 7.0 0.12 7.5 
8 2.0 0.31 6.5 0.18 7.5 0.17 7.8 
9 3.0 0.51 6.7 0.29 7.7 0.28 9.9 
10 4.0 0.68 6.8 0.34 8.5 0.33 10.0 
11 5.0 0.88 6.9 0.49 8.9 0.39 10.5 
 
 
Page 4


DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
1 
1. COMMON EMITTER TRANSISTOR 
CHARACTERISTICS 
Aim: 
 1. To plot the input and output static characteristics. 
 2. To calculate the input dynamic resistance from the input characteristics 
and output dynamic resistance and current gain from the output 
characteristics of the given transistor. 
 
Apparatus Required: 
S.No 
Name of the 
Equipment/Component 
Specifications Quantity 
1 Transistor (BC 107) 
I
cmax
=100mA 
P
D
=300mw 
V
ceo
=45V 
V
beo
=50V 
1 
2 Resistors-39K?,1K? 
Power rating=0.5w 
Carbon type 
 1 
3 Regulated Power Supply 0-30V,1A 1 
4 Volt meters 0-1V, 0-10V 1 
5 Ammeters 0-300µA, 0-10mA 1 
 
Theory: 
In common emitter configuration the emitter is common to both input and output. 
For normal operation the Base-Emitter junction is forward biased and base-
collector junction is reveres biased .The input characteristics are plotted between 
I
B
 and V
BE
 keeping the voltage V
CE
 constant. This characteristic is very similar to 
that of a forward biased diode. The input dynamic resistance is calculated using 
the formula 
                    r
i
    =   ? V
BE
 / ? I
B
  at constant V
CE
 
 
The output characteristics are plotted between I
C
 and V
CE
 keeping I
B
 constant. 
These curves are almost horizontal. The output dynamic resistance is given by,  
                   r
o
    =    ?V
CE 
/   ? I
C
   at constant I
B
 
At a given operating point, we define DC and AC current gains (beta) as follows 
                DC current gain ß
dc 
= I
C 
/ I
B
        at constant V
CE
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
2 
                AC current gain ß
ac 
= ? I
C
/ ? I
B
   at constant V
CE. 
 
Circuit diagram: 
 
Fig A: Transistor Common Emitter Configuration 
Procedure: 
a) Input Characteristics: 
1. Connect the circuit as shown in fig A. 
2. Keep the voltage V
CE
 as constant at 2V by varying V
CC
. 
3. Vary the input voltage, V
BB
 in steps of 1V up to 10V 
4. Measure the voltage, V
BE
 from voltmeter and current, I
B
 through the 
ammeter for different values of input voltages 
5. Repeat the step 3 and 4 for V
CE  
values of 5V and 10V 
6. Draw input static characteristics for tabulated values 
7. At suitable operating point, calculate input dynamic resistance. 
     b) Output Characteristics: 
1. Fix input base current, I
B
 at constant value say at 10µA. 
2. Vary the output voltage, V
CC
 in steps of 1V from 0V up to10V. 
3. Measure the voltage, V
CE
 from voltmeter and current I
C
 through the 
ammeter for different values. 
4. Repeat above steps 2and 3 for various values of I
B
=20µA and 30µA. 
5. Draw output static characteristics for tabulated values 
 
 
 
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
3 
Tabular forms: 
a) Input Characteristics: 
V
CE  
=  2V V
CE  
=  5V V
CE  
=  10V  
S.No 
 
Applied 
Voltage 
V
BB
(V) 
V
BE
(V) I
B
(µA) V
BE
(V) I
B
(µA) V
BE
(V) I
B
(µA) 
1 0 0 0 0 0 0 0 
2 0.2 0.258 0 0.279 0 0.231 0 
3 0.4 0.461 35 0.460 45 0.474 40 
4 0.6 0.562 60 0.620 60 0.592 60 
5 0.8 0.609 90 0.629 90 0.620 90 
6 1.0 0.625 110 0.670 110 0.662 110 
7 2.0 0.648 140 0.679 140 0.682 140 
8 3.0 0.654 160 0.681 160 0.692 160 
9 4.0 0.669 190 0.684 185 0.724 190 
10 5.0 0.690 210 0.689 210 0.726 218 
 
b) Output Characteristics: 
I
B  
=  10µA I
B  
=  20µA I
B  
=  30µA  
S. 
No 
 
Applied 
voltage 
Vcc (V) 
V
CE
(V) I
C
(mA) V
CE
 (V) I
C
(mA) V
CE
 (V) I
C
(mA) 
1 0 0 0 0 0 0 0 
2 0.2 0.02 0 0.02 0 0.02 0 
3 0.4 0.06 0 0.05 0 0.04 0 
4 0.6 0.08 1.0 0.08 2.2 0.05 2.6 
5 0.7 0.1 3.2 0.09 4.5 0.06 4.6 
6 0.8 0.12 5.0 0.1 6.2 0.07 6.5 
7 1.0 0.21 6.2 0.15 7.0 0.12 7.5 
8 2.0 0.31 6.5 0.18 7.5 0.17 7.8 
9 3.0 0.51 6.7 0.29 7.7 0.28 9.9 
10 4.0 0.68 6.8 0.34 8.5 0.33 10.0 
11 5.0 0.88 6.9 0.49 8.9 0.39 10.5 
 
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
4 
Model graphs: 
 
       Fig B: Input Characteristics                   Fig C: Output Characteristics 
 
Calculations: 
a) Input Characteristics: 
Input Resistance,   r
i 
=   ? V
BE
 / ? I
B
  at  V
CE
 constant   
               = (0.654-0.647) / (90-30) X 10
-6
  
             = 116?. 
b) Output Characteristics: 
Output dynamic resistance,  r
o
 =    ?V
CE 
/ ? I
C
  at I
B
 constant 
    = (0.9-0.15) / (9.25-7.2) X10
-3
 
    = 365.85?. 
Current gain,    ß
 
= ? I
C
 / ? I
B
   at V
CE
 constant  
   = (8.8-6.8)10
-3
/10X10
-6 
    
= 200 
Precautions: 
1. Connections must be done very carefully. 
2. Readings should be noted without parallax error. 
3. The applied voltage, current should not exceed the maximum rating of the 
given transistor. 
 
Result: 
 Input and output characteristics are observed for the given transistor in 
common emitter configuration. The input resistance, output resistance and the 
current gain are calculated. 
 
Page 5


DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
1 
1. COMMON EMITTER TRANSISTOR 
CHARACTERISTICS 
Aim: 
 1. To plot the input and output static characteristics. 
 2. To calculate the input dynamic resistance from the input characteristics 
and output dynamic resistance and current gain from the output 
characteristics of the given transistor. 
 
Apparatus Required: 
S.No 
Name of the 
Equipment/Component 
Specifications Quantity 
1 Transistor (BC 107) 
I
cmax
=100mA 
P
D
=300mw 
V
ceo
=45V 
V
beo
=50V 
1 
2 Resistors-39K?,1K? 
Power rating=0.5w 
Carbon type 
 1 
3 Regulated Power Supply 0-30V,1A 1 
4 Volt meters 0-1V, 0-10V 1 
5 Ammeters 0-300µA, 0-10mA 1 
 
Theory: 
In common emitter configuration the emitter is common to both input and output. 
For normal operation the Base-Emitter junction is forward biased and base-
collector junction is reveres biased .The input characteristics are plotted between 
I
B
 and V
BE
 keeping the voltage V
CE
 constant. This characteristic is very similar to 
that of a forward biased diode. The input dynamic resistance is calculated using 
the formula 
                    r
i
    =   ? V
BE
 / ? I
B
  at constant V
CE
 
 
The output characteristics are plotted between I
C
 and V
CE
 keeping I
B
 constant. 
These curves are almost horizontal. The output dynamic resistance is given by,  
                   r
o
    =    ?V
CE 
/   ? I
C
   at constant I
B
 
At a given operating point, we define DC and AC current gains (beta) as follows 
                DC current gain ß
dc 
= I
C 
/ I
B
        at constant V
CE
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
2 
                AC current gain ß
ac 
= ? I
C
/ ? I
B
   at constant V
CE. 
 
Circuit diagram: 
 
Fig A: Transistor Common Emitter Configuration 
Procedure: 
a) Input Characteristics: 
1. Connect the circuit as shown in fig A. 
2. Keep the voltage V
CE
 as constant at 2V by varying V
CC
. 
3. Vary the input voltage, V
BB
 in steps of 1V up to 10V 
4. Measure the voltage, V
BE
 from voltmeter and current, I
B
 through the 
ammeter for different values of input voltages 
5. Repeat the step 3 and 4 for V
CE  
values of 5V and 10V 
6. Draw input static characteristics for tabulated values 
7. At suitable operating point, calculate input dynamic resistance. 
     b) Output Characteristics: 
1. Fix input base current, I
B
 at constant value say at 10µA. 
2. Vary the output voltage, V
CC
 in steps of 1V from 0V up to10V. 
3. Measure the voltage, V
CE
 from voltmeter and current I
C
 through the 
ammeter for different values. 
4. Repeat above steps 2and 3 for various values of I
B
=20µA and 30µA. 
5. Draw output static characteristics for tabulated values 
 
 
 
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
3 
Tabular forms: 
a) Input Characteristics: 
V
CE  
=  2V V
CE  
=  5V V
CE  
=  10V  
S.No 
 
Applied 
Voltage 
V
BB
(V) 
V
BE
(V) I
B
(µA) V
BE
(V) I
B
(µA) V
BE
(V) I
B
(µA) 
1 0 0 0 0 0 0 0 
2 0.2 0.258 0 0.279 0 0.231 0 
3 0.4 0.461 35 0.460 45 0.474 40 
4 0.6 0.562 60 0.620 60 0.592 60 
5 0.8 0.609 90 0.629 90 0.620 90 
6 1.0 0.625 110 0.670 110 0.662 110 
7 2.0 0.648 140 0.679 140 0.682 140 
8 3.0 0.654 160 0.681 160 0.692 160 
9 4.0 0.669 190 0.684 185 0.724 190 
10 5.0 0.690 210 0.689 210 0.726 218 
 
b) Output Characteristics: 
I
B  
=  10µA I
B  
=  20µA I
B  
=  30µA  
S. 
No 
 
Applied 
voltage 
Vcc (V) 
V
CE
(V) I
C
(mA) V
CE
 (V) I
C
(mA) V
CE
 (V) I
C
(mA) 
1 0 0 0 0 0 0 0 
2 0.2 0.02 0 0.02 0 0.02 0 
3 0.4 0.06 0 0.05 0 0.04 0 
4 0.6 0.08 1.0 0.08 2.2 0.05 2.6 
5 0.7 0.1 3.2 0.09 4.5 0.06 4.6 
6 0.8 0.12 5.0 0.1 6.2 0.07 6.5 
7 1.0 0.21 6.2 0.15 7.0 0.12 7.5 
8 2.0 0.31 6.5 0.18 7.5 0.17 7.8 
9 3.0 0.51 6.7 0.29 7.7 0.28 9.9 
10 4.0 0.68 6.8 0.34 8.5 0.33 10.0 
11 5.0 0.88 6.9 0.49 8.9 0.39 10.5 
 
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
4 
Model graphs: 
 
       Fig B: Input Characteristics                   Fig C: Output Characteristics 
 
Calculations: 
a) Input Characteristics: 
Input Resistance,   r
i 
=   ? V
BE
 / ? I
B
  at  V
CE
 constant   
               = (0.654-0.647) / (90-30) X 10
-6
  
             = 116?. 
b) Output Characteristics: 
Output dynamic resistance,  r
o
 =    ?V
CE 
/ ? I
C
  at I
B
 constant 
    = (0.9-0.15) / (9.25-7.2) X10
-3
 
    = 365.85?. 
Current gain,    ß
 
= ? I
C
 / ? I
B
   at V
CE
 constant  
   = (8.8-6.8)10
-3
/10X10
-6 
    
= 200 
Precautions: 
1. Connections must be done very carefully. 
2. Readings should be noted without parallax error. 
3. The applied voltage, current should not exceed the maximum rating of the 
given transistor. 
 
Result: 
 Input and output characteristics are observed for the given transistor in 
common emitter configuration. The input resistance, output resistance and the 
current gain are calculated. 
 
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING 
ELECTRONIC DEVICES & CIRCUITS LAB 
 
5 
Inference: 
It is observed from the input characteristics that as V
CE 
increases, the curves are           
shifted towards right side. This is due to the Early effect. 
 
Questions & Answers: 
1. List various operating regions of Transistor 
A. Active region, cut-off region, and saturation region. 
2. List various biasing circuits 
A. Fixed bias, collector to base bias, and self bias. 
3. Give Transistor current equation in CE configuration 
A. I
C 
=ß I
B
 + (1+ß) I
CEO.

FAQs on Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE

1. What is the common emitter transistor configuration?

Ans. The common emitter transistor configuration is a type of transistor circuit where the emitter is connected to the common ground, the base is the input, and the collector is the output.

2. What are the characteristics of a common emitter transistor?

Ans. The characteristics of a common emitter transistor include a high current gain, a voltage gain less than unity, an inverted output signal, and a phase reversal between input and output signals.

3. How do you plot the input and output characteristics of a common emitter transistor?

Ans. To plot the input and output characteristics of a common emitter transistor, we need to measure the collector current and collector-emitter voltage for different values of base current. Plotting these values on a graph gives us the input and output characteristics of the transistor.

4. What is the purpose of the load line in a common emitter transistor circuit?

Ans. The load line in a common emitter transistor circuit is used to determine the operating point of the transistor. It represents the possible combinations of collector current and collector-emitter voltage that the transistor can handle without getting damaged.

5. How does the bias voltage affect the operation of a common emitter transistor circuit?

Ans. The bias voltage is used to set the operating point of the transistor at the center of its active region. If the bias voltage is too low, the transistor may not turn on properly, while if it is too high, the transistor may get damaged due to excessive current flow.

About this Document

23.3K Views

4.86/5 Rating

Oct 09, 2025 Last updated

Related Exams

JEE Class 12

Document Description: Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS for JEE 2025 is part of JEE preparation. The notes and questions for Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS have been prepared according to the JEE exam syllabus. Information about Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS covers topics like and Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS Example, for JEE 2025 Exam. Find important definitions, questions, notes, meanings, examples, exercises and tests below for Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS.

Introduction of Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS in English is available as part of our JEE preparation & Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS in Hindi for JEE courses. Download more important topics, notes, lectures and mock test series for JEE Exam by signing up for free. JEE: Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE

Description

Full syllabus notes, lecture & questions for Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE - JEE | Plus excerises question with solution to help you revise complete syllabus | Best notes, free PDF download

Information about Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS

In this doc you can find the meaning of Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS defined & explained in the simplest way possible. Besides explaining types of Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS theory, EduRev gives you an ample number of questions to practice Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS tests, examples and also practice JEE tests.

Download as PDF

Top Courses for JEE

View all courses for JEE

video lectures

shortcuts and tricks

Previous Year Questions with Solutions

Summary

Free

MCQs

Important questions

Exam

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE

ppt

past year papers

mock tests for examination

pdf

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE

Extra Questions

study material

Sample Paper

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS - JEE

Objective type Questions

Viva Questions

Semester Notes

practice quizzes

;

Additional Information about Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS for JEE Preparation

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS Free PDF Download

The Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS is an invaluable resource that delves deep into the core of the JEE exam. These study notes are curated by experts and cover all the essential topics and concepts, making your preparation more efficient and effective. With the help of these notes, you can grasp complex subjects quickly, revise important points easily, and reinforce your understanding of key concepts. The study notes are presented in a concise and easy-to-understand manner, allowing you to optimize your learning process. Whether you're looking for best-recommended books, sample papers, study material, or toppers' notes, this PDF has got you covered. Download the Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS now and kickstart your journey towards success in the JEE exam.

Importance of Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS

The importance of Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS cannot be overstated, especially for JEE aspirants. This document holds the key to success in the JEE exam. It offers a detailed understanding of the concept, providing invaluable insights into the topic. By knowing the concepts well in advance, students can plan their preparation effectively. Utilize this indispensable guide for a well-rounded preparation and achieve your desired results.

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS Notes

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS Notes offer in-depth insights into the specific topic to help you master it with ease. This comprehensive document covers all aspects related to Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS. It includes detailed information about the exam syllabus, recommended books, and study materials for a well-rounded preparation. Practice papers and question papers enable you to assess your progress effectively. Additionally, the paper analysis provides valuable tips for tackling the exam strategically. Access to Toppers' notes gives you an edge in understanding complex concepts. Whether you're a beginner or aiming for advanced proficiency, Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS Notes on EduRev are your ultimate resource for success.

Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS JEE Questions

The "Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS JEE Questions" guide is a valuable resource for all aspiring students preparing for the JEE exam. It focuses on providing a wide range of practice questions to help students gauge their understanding of the exam topics. These questions cover the entire syllabus, ensuring comprehensive preparation. The guide includes previous years' question papers for students to familiarize themselves with the exam's format and difficulty level. Additionally, it offers subject-specific question banks, allowing students to focus on weak areas and improve their performance.

Study Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS on the App

Students of JEE can study Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS alongwith tests & analysis from the EduRev app, which will help them while preparing for their exam. Apart from the Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS, students can also utilize the EduRev App for other study materials such as previous year question papers, syllabus, important questions, etc. The EduRev App will make your learning easier as you can access it from anywhere you want. The content of Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS is prepared as per the latest JEE syllabus.

Education Revolution