Test: MOSFETs Device Structure & Physical Operation - Electrical Engineering (EE) MCQ

The substrate is of p-type semiconductor

Inversion layer or induced channel is of n type

Threshold voltage is negative

None of the mentioned

Electron mobility only

(Electron mobility)-1 only

Oxide capacitance only

Product of oxide capacitance and electron mobility

V²/A

A/V²

V/A

A/V

No units

m

m²

m^-1

Process transconductance and inverse of aspect ratio

Inverse of Process transconductance and aspect ratio

Inverse of Process transconductance and inverse of aspect ratio

Process transconductance and aspect ratio

Linearly

Inversely

Exponentially

Logarithmically

The source and drain are a p type semiconductor

The induced channel is p type region which is induced by applying a positive potential to the gate

The substrate is a n type semiconductor

None of the mentioned

Will remain as was before

Will become non uniform and will take a tapered shape with deepest width at the drain

Will become non uniform and will take a tapered shape with deepest width at the source

Will remain uniform but the width of the channel will increase

The voltage between the drain and drain becomes equal to the overdrive voltage

The voltage between the drain and drain becomes equal to the threshold voltage

The voltage between the drain and drain becomes equal to the voltage applied to the gate

The voltage between the drain and drain becomes equal to difference the overdrive voltage and the threshold voltage

The width of the induced channel becomes non linear

The width of the induced channel becomes very large (resulting in very large resistance and very low, practically zero, current)

width becomes 1/e times the maximum possible width

The width of the induced channel becomes zero and the current saturates