Test: The P-N Junction - Electrical Engineering (EE) MCQ

 Holes are the majority charge carriers in p-type material.

Donor impurities denote an electron to the n-type material making it a electron majority carrier & vice-versa.

 Holes are the majority charge carriers in p-type material & vice-versa.

Electrons are the majority charge carriers in n-type material.

Diode is a two terminal device, anode & cathode are the two terminals.

Holes are the minority charge carriers in n-type material & vice-versa.

A Schottky diode is a type of semiconductor device known for its fast switching and low forward voltage drop. It is primarily characterised by the following features:

• Metal-semiconductor junction: Unlike regular diodes, Schottky diodes are formed by a junction between a metal and a semiconductor, typically silicon.
• Low forward voltage drop: This characteristic allows for efficient operation, making them suitable for high-speed applications.
• Fast switching speeds: Schottky diodes can switch on and off much quicker than standard diodes, which is beneficial in high-frequency circuits.
• Applications: They are commonly used in power supplies, radio frequency applications, and as rectifiers in solar panels.

When p & n region come together diffusion takes places & a depletion region is established with opposite charges on both the sides of the junction.

A potential difference is established across the junctions due to recombination of holes & electrons. This growing field (barrier potential) stops the further diffusion.

The diode is forward biased, positive is connected to p & vice-versa, as such batter provides EMF to drive electrons from n-region to p-region.