Test: Power Diode - Electrical Engineering (EE) MCQ

low forward current carrying capacity

large reverse breakdown voltage

high ohmic junction resistance

high reverse recovery time

a lightly doped n layer is grown between the two p & n layers

a heavily doped n layer is grown between the two p & n layers

a lightly doped p layer is grown between the two p & n layers

a heavily doped p layer is grown between the two p & n layers

a three terminal semiconductor device

a two terminal semiconductor device

a four terminal semiconductor device

a three terminal analog device

1st & 2nd quadrant

1st & 3rd quadrant

1st & 4th quadrant

Only in the 1st quadrant

I grows almost linearly with V

I decays almost linearly with V

I is independent of V

I initial grows than decays

cathode is positive with respect to the anode

anode is positive with respect to the cathode

cathode is negative with respect to the anode

both cathode & anode are negative

cathode is positive with respect to the anode

anode is positive with respect to the cathode

anode is negative with respect to the anode

both cathode & anode are positive

anode to cathode

cathode to anode

in both the directions

leakage current does not flow

 I_P=t + di/dt

I_P=t * log ⁡i

I_P=t * di/dt

I_P=t * ∫ t*i dt

small oscillatory over voltages

large oscillatory over voltages

large peak reverse current

small peak reverse current

V/I

V² I²

I² V

VI

When both V & I are minimum

When both V & I are maximum

When only V is maximum

When only I is maximum

resistance of the diode

high junction temperature

stored charges in the depletion region

none of the mentioned

inverse voltage

forward Voltage

di/dt

all of the above mentioned

voltage source

phase angle controller

freewheeling Diode

filter

increases

decreases

remains Constant

increases than Decreases

increases

decreases

remains Constant

none of the above mentioned

decreases the width of the depletion region

increases the barrier potential

increases the width of the depletion region

width of the depletion region increases but the barrier potential remains constant

0.3 V

0.7 V

1.3 V

0 V

0.3 V

0.7 V

1.7 V

0 V