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Electronics and Communication Engineering (ECE) Exam  >  Electronics and Communication Engineering (ECE) Test  >  GATE ECE (Electronics) Mock Test Series 2027  >  Test: Electronic Devices - 2 - Electronics and Communication Engineering (ECE) MCQ

GATE ECE (Electronics) Test: Electronic Devices - 2 Free Online Test 2026


MCQ Practice Test & Solutions: Test: Electronic Devices - 2 (10 Questions)

You can prepare effectively for Electronics and Communication Engineering (ECE) GATE ECE (Electronics) Mock Test Series 2027 with this dedicated MCQ Practice Test (available with solutions) on the important topic of "Test: Electronic Devices - 2". These 10 questions have been designed by the experts with the latest curriculum of Electronics and Communication Engineering (ECE) 2026, to help you master the concept.

Test Highlights:

  • - Format: Multiple Choice Questions (MCQ)
  • - Duration: 30 minutes
  • - Number of Questions: 10

Sign up on EduRev for free to attempt this test and track your preparation progress.

Test: Electronic Devices - 2 - Question 1
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Which of the following quantities cannot be measured/determined using Hall Effect?

Detailed Solution: Question 1

If a semiconductor carrying current is placed in a transverse magnetic field B, an electric field E is induced in the direction perpendicular to both I and B. This phenomenon is known as the Hall Effect, it can be used to determine whether semi-conductor is n-or p-type and to find the carrier concentration and mobility.

Diffusion constant is found from electron mobility using Einstein relationship.

*Answer can only contain numeric values
Test: Electronic Devices - 2 - Question 2
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The ratio of hole diffusion current to the electron diffusion current in an infinite p-n junction is 4. If conductivity on p-side is 1.4 S/cm and on n-side is 2.8 S/cm, then the ratio of diffusion length Ln and Lp (ie Ln/Lp) is _______.


Detailed Solution: Question 2

For diffusion current

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Test: Electronic Devices - 2 - Question 3
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Under high electric fields, in a semiconductor with increasing electric field,

Detailed Solution: Question 3

we known that

V = μE

μ = constant when E < 103 V/cm
 when 103 < E < 104 V/cm
 

 when E > 104 V/cm

∴ When E Increase mobility decrease.

*Answer can only contain numeric values
Test: Electronic Devices - 2 - Question 4
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The energy band structure of n-type semiconductor is as shown below

The probability that the donor energy state is empty is (up to 3 significant digits)


Detailed Solution: Question 4


According to Fermi function,

Probability it is empty is 1 – F(ED) = 1 – 0.014 = 0.986

Test: Electronic Devices - 2 - Question 5
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In a hypothetical semiconductor hole concentration is 2 × 1015/cm3 and electron concentration is 1 × 1015/cm3. The mobility of holes is  and mobility of electrons is  

If the specimen is subjected to hall measurement. Then the measured hall coefficient (RH) is

Detailed Solution: Question 5

For a semiconductor with significant concentration of both type of carriers

*Answer can only contain numeric values
Test: Electronic Devices - 2 - Question 6
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In a germanium semiconductor at 127°C has a hole concentration gradient between two points 1.5 × 1022/m3. If the hole mobility in germanium is 800 cm2/v-s, then the diffusion current density is ______ A/m2.


Detailed Solution: Question 6

Given,

T = 127°C = 400°K

μP = 800 cm2/v-s

DP = μP VT

VT = kT/2 = 
⇒ DP = 800 × 0.0345 cm2/s = 27.6 cm2/s

= -1.5 × 1022 × 10-8 × 1.6 × 10-19 × 27.6 A/cm2

= -6.624 A/m2

Test: Electronic Devices - 2 - Question 7
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Consider two energy levels: E1, E eV above the Fermi level and E2, E eV below the Fermi level. P1 and P2 are respectively the probabilities of E1 being occupied by an electron and E2 being empty. Then

1. P1 > P2

2. P1 = P2

3. P1 < P2

4. P1 & P2 depends on the number of free electrons

Detailed Solution: Question 7

Correct option: B

The occupancy probability for an energy level E is given by f(E) = 1 / (1 + e(E - EF)/(kT)).

For the level above the Fermi level by E, its occupancy is P1 = 1 / (1 + eE/(kT)).

The empty probability for the level below the Fermi level by E is P2 = 1 - f(EF - E) = 1 - 1 / (1 + e-E/(kT)).

Simplifying, 1 - 1 / (1 + e-E/(kT)) = e-E/(kT) / (1 + e-E/(kT)) = 1 / (1 + eE/(kT)).

Therefore P1 = P2, so option B is correct.



*Answer can only contain numeric values
Test: Electronic Devices - 2 - Question 8
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A silicon sample is dope with unknown concentration of Arsenic, such that the fermi level (EF) is 0.407 eV relative to intrinsic level (Ei). The conductivity of the silicon sample after doping is______(Ω – cm)-1.

The mobility of electrons μn = 3800 cm2/v-s and holes μp = 1800 cm2/v-s. Take kT = 0.0259 eV at 300°K and intrinsic concentration ni = 1.5 × 1010 cm-3


Detailed Solution: Question 8

Given, Si sample is doped with As (donor impurity) and the band structure is


Let nd be doping concentration, hence the electron concentration also is nd.

The extrinsic electron concentration is related to intrinsic concentration by

 

∴ Conductivity σ = μndq

= 3800 × 1 × 1017 × 1.6 × 10-19

= 60.8 (Ω - cm)-1

Test: Electronic Devices - 2 - Question 9
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The effective density of states in conduction and valence band NC and Nv at 300K is 4.7x1017 cm−3 and 7x1018cm−3 respectively. The bandgap of the mentioned semiconductor is 1.42eV at 300K. The intrinsic carrier concentration is:

Use Boltzmann constant k = 8.62 x 10−5 eV/K

Detailed Solution: Question 9

Given
Nc = 4.7 x 1017 cm−3
Nv = 7 x 1018 cm−3

Eg = 1.42 eV
Now,

*Answer can only contain numeric values
Test: Electronic Devices - 2 - Question 10
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Holes are being steadily injected into a region of n-type silicon. In the steady state, the excess hole concentration profile is shown. [The term excess means over and above concentrations pno]

If  Dp = 12 cm2/sec ND = 1016/cm3, ni = 1.5 × 1010/cm3 and w = 5 μm.

The current density that will flow in x-direction is _____ nA/cm2.


Detailed Solution: Question 10

The diffusion current density is given by

= -4.49 × 1010/cm4
 


= -1.6 × 10-19 × 12 × (-4.49 × 1010)

= 8.64 × 10-8 A/cm2

= 86.4 × 10-9 nA/cm2

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About this Electronics and Communication Engineering (ECE) Practice Test

This test contains 10 MCQs on Electronic Devices - 2 with detailed solutions for each question. It is part of the GATE ECE (Electronics) Mock Test Series 2027 course on EduRev, designed to align with the current Electronics and Communication Engineering (ECE) syllabus. Each solution explains not just the correct answer but also gives you an understanding of the topic — not just to attempt the question but also help you prepare for the exam with practice.

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