In a common emitter amplifier, the unbypassed emitter resistance provide:-
In the following given circuit, calculate the value of "Vce" if the transistor is working in cut off:-
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A change in the value of the emitter resistance (Re), in a differential amplifier:-
The ripple factor of a power supply is given by (symbols have the usual meaning)
A diode has a reverse saturation current Is = 10-10 A & non-ideality factor η = 2. If diode voltage is 0.9 V then diode current is:-
An op-amp has a slow-rate 5V/μs. The largest sinwave output voltage possible at a frequency of 1MHz is:-
The form factor (in case of resistive load) for a full wave rectifier is:-
The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of:
Silicon diode is less suited for low voltage rectifier operation, because:-
The breakdown voltage of a transistor with its base open is BVCEO & that with emitter open is BVCBO, then
In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base emitter junction will
What is the current through 100Ω resistance is the circuit shown below?
Which of the following statements if not true regarding the magnitude of barrier potential of a p-n junction.
If in a p-n junction diode, a square input signal of 6V is applied see figure be-low, what is the value of the output signal across 'RL'?
The circuit shown below has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit?
The input signal given to a CE amplifier having a voltage gain of 150 is V1 = 2cos(15t+100). The corresponding output signal is:
In the following circuit, the voltage across & the current through the 2kΩ resistance are:
In the following circuit Tr1 & Tr2 are identical transistors having VBE = 0.7V. The current passing through the transistor Tr2 is :
A bipolar junction transistors with one junction forward biased & either the collector or emitter open, operated in the :
A silicon diode is in series with a 1.0 kΩ resistor and a 5V battery. If the anode is connected to the positive battery terminal, the cathode voltage with respect to the negative battery terminal is:
Which one of the following statement is true for a semiconductor p-n junction with no external bias?
An intrinsic semiconducting sample has an energy gap of 0.38eV, calculate the probability at 1000C that the lowest level in the conduction band will be occupied.
Which of the following output curves correctly represent the output of the given clamper circuit:-
Which relation is correct for intrinsic semiconductor?
(where conducting of material μn and μp is the electron mobility and hole mobility respectively.
If the transistor of an amplifier is changed & the gain is increased by two times, which of the following Parameters will have the higher increase in its value :-
Mobility of free electrons depends on temperature variation in case of a semiconductor as:-
The graph of where P → Resistinity & 'T' is the temperature :-
In a germanium semiconductor material used in transistors, mobility of electrons is 3900 cm2N. How much velocity do they have?
A CE amplifier has voltage gain of 50, an input impedance of 1000Ω and an output impedance of 200Ω. The power gain of the amplifier will be :