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Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Tests  >  Test: Field Effect Transistors- 2 - Electrical Engineering (EE) MCQ

Test: Field Effect Transistors- 2 - Electrical Engineering (EE) MCQ


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15 Questions MCQ Test - Test: Field Effect Transistors- 2

Test: Field Effect Transistors- 2 for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: Field Effect Transistors- 2 questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Field Effect Transistors- 2 MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Field Effect Transistors- 2 below.
Solutions of Test: Field Effect Transistors- 2 questions in English are available as part of our course for Electrical Engineering (EE) & Test: Field Effect Transistors- 2 solutions in Hindi for Electrical Engineering (EE) course. Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free. Attempt Test: Field Effect Transistors- 2 | 15 questions in 45 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study for Electrical Engineering (EE) Exam | Download free PDF with solutions
Test: Field Effect Transistors- 2 - Question 1
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In the saturation region, the JFET transfer characteristics are

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The transfer characteristic, giving the relationship between ID and VGS, can be approximated by the parabola

Test: Field Effect Transistors- 2 - Question 2
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The threshold voltage (VT) of a - MOSFET is defined as

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The transfer characteristic of an N - MOSFET indicating VT is shown below.

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Test: Field Effect Transistors- 2 - Question 3
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In a JFET, the drain current magnitude decreases as the reverse bias across the gate-channel increases because a larger reverse bias causes

Test: Field Effect Transistors- 2 - Question 4
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The common source JFET amplifier has
Test: Field Effect Transistors- 2 - Question 5
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Assertion (A): In the JFET, the transverse electric field across the reverse biased p-n junction controls the conductivity of the channel.
Reason (R): In enhancement and depletion types of MOSFET, the transverse electric field induced across an insulating layer deposited on the semiconductor material controls the conductivity of the channel.
Test: Field Effect Transistors- 2 - Question 6
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Four important parameters of MOSFET and JFET have comparatively larger or smaller values. In comparison to a JFET, a MOSFET will have which one of the following combinations?
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Test: Field Effect Transistors- 2 - Question 7
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Match List-I (Device) with List-II (Applications) and select the correct answer using the codes given below the Lists:

Codes:
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• Special digital CMOS circuits are available which involve near-zero power dissipation and very low voltage and current requirements. This makes them most suitable for portable systems.
• Since JFET is voltage controlled device, it is used as a voltage variable resistor in operational amplifiers and tone controls.
• Due to zero offset voltage and its symmetrical nature, MOSFET is useful in analog signal switching.
• UJT is used as a relaxation oscillator for generating sawtooth waveforms.

Test: Field Effect Transistors- 2 - Question 8
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Consider the following statements:
1. In enhancement n-channel MOSFET an induced n-type channel can be produced between the source and drain if VGS is negative.
2. AFET is more sensitive to variations in input voltage in comparison to an ordinary transistor.
3. AFET is characterized by transconductance.
4 UJT has onli one p-n junction and three leads.

Of these statements which are not correct is/are?
Test: Field Effect Transistors- 2 - Question 9
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What are the values of VP and ID for VGS = 0.5 V of an N-channel FET that has IDSS = 10 mA with drain voltage of 5 V and gmo = 5 mA/V?
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and, 
= 10 (1 -0.125)2
= 10 x 0.765 = 7.65 mA

Test: Field Effect Transistors- 2 - Question 10
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An N-channel JFET has IDss = 1mA and VP = -5 V. The value of its maximum transconductance is
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and 
∴ 

Test: Field Effect Transistors- 2 - Question 11
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N-channel FETs are superior to P-channel FETs, because
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n-channel FETs are superior to p-chanel FETs because n-channel FETs are faster than p-channel FETs since μn > μP.

Test: Field Effect Transistors- 2 - Question 12
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In a FET as VGS is changed from zero to increasing reverse bias, the value of gm
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Test: Field Effect Transistors- 2 - Question 13
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A properly biased JFET will act as a
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Due to high input impedance of JFET, it acts as a voltage controlled current source i.e. IG = 0 A.

Test: Field Effect Transistors- 2 - Question 14
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A FET is a better chopper than a BJT because it has
Test: Field Effect Transistors- 2 - Question 15
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The variation of drain current with gate-to-source voltage (ID- VGS) characteristic of MOSFET is shown in the figure below.
The MOSFET is
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