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Test: Basics and Power Semiconductor Devices - 1 - GATE MCQ


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10 Questions MCQ Test - Test: Basics and Power Semiconductor Devices - 1

Test: Basics and Power Semiconductor Devices - 1 for GATE 2024 is part of GATE preparation. The Test: Basics and Power Semiconductor Devices - 1 questions and answers have been prepared according to the GATE exam syllabus.The Test: Basics and Power Semiconductor Devices - 1 MCQs are made for GATE 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Basics and Power Semiconductor Devices - 1 below.
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Test: Basics and Power Semiconductor Devices - 1 - Question 1
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Figure shows four electronic switches (i), (ii), (iii) and (iv). Which of the switches can block voltages of either polarity (applied between terminals a and b) when the active device is in the OFF state?

a a a a

b b b b

Test: Basics and Power Semiconductor Devices - 1 - Question 2
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The MOSFET switch in its on-state may be considered equivalent to

Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 2
MOSFET in its on state gives a variable resistance depending upon the magnitude of gate voltage. Therefore, it can be treated as a resistor. Hence, the correct option is (a).
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Test: Basics and Power Semiconductor Devices - 1 - Question 3
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The typical ratio of latching current to holding current in a 20 A thyristor is

Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 3
Typical ratio of latching current to holding current lies in the range of 2.5 to 3. Therefore, only 2.0 is the nearest option. Hence, the correct option is (b).
Test: Basics and Power Semiconductor Devices - 1 - Question 4
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Circuit turn-off time of an SCR is defined as the time
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 4
Hence, the correct option is (c).
Test: Basics and Power Semiconductor Devices - 1 - Question 5
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Figure shows a composite switch consisting of a power transistor (BJT) in series with a diode. Assume that the transistor switch and the diode are ideal. The I–V characteristic of the composite switch is
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 5
Hence, the correct option is (c).
Test: Basics and Power Semiconductor Devices - 1 - Question 6
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An SCR is considered to be a semi controlled device because
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 6
Application of negative gate pulse to a conducting thyristor cannot turn-off the device. Therefore, only the turn-on of the SCR can be controlled using a gate pulse. Hence, it is called a semi controlled switch. Hence, the correct option is (c).
Test: Basics and Power Semiconductor Devices - 1 - Question 7
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The conduction loss versus device current characteristic of a power MOSFET is best approximated by
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 7
The conduction loss in a MOSFET is due to the variable resistance path during the on-state.

∴ Ploss = I2ds (RChannel + Rdevice)

= I2ds RON*

∴ Conduction loss versus device current graph will be a parabola. Hence, the correct option is (a).

Test: Basics and Power Semiconductor Devices - 1 - Question 8
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A bipolar junction transistor (BJT) is used as a power control switch by biasing it in cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT,
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 8

Cut off region: Both base–emitter and base–collector junctions are reverse biased. Saturation region: Both base–emitter and base– collector junctions are forward biased. Hence, the correct option is (d).

Test: Basics and Power Semiconductor Devices - 1 - Question 9
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The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of 10 mA, for guaranteed turn-on. The value of R required for the thyristor to turn on reliably under all conditions of Vb variation is
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 9
Thyristor requires a gate current of 10 mA to turn on. Thyristor will turn on under any voltage conditions only when minimum gate voltage can produce the necessary gate current.

∴ = Vbmin =12 − = 4 = 8 V.

Applying KVL in the gate circuit, we get,Vbmin = I g R.

Hence, the correct option is (d).

Test: Basics and Power Semiconductor Devices - 1 - Question 10
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Figure shows a thyristor with the standard terminations of anode (A), cathode (K), gate (G) and the different junctions named J1 , J2 and J3 . When the thyristor is turned on and conducting
Detailed Solution for Test: Basics and Power Semiconductor Devices - 1 - Question 10

When an SCR is in the on-state or in conduction state, all the junctions are forward biased. Hence, the correct option is (d).

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