Test: Basics of Semiconductor - Electrical Engineering (EE) MCQ
25 Questions MCQ Test - Test: Basics of Semiconductor
An excited electron is an atom returns to the ground state
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For photo - Excitation to take place, the energy of the incident photon must
Where w is the energy difference between the two stationary states.
For forming p type germenium, the impurity atom must have valency of
For forming n - type germenium the impurity atom has valency of
In n- type semiconductor, new discrete energy levels get created
In p - type germanium, new discrete levels get created
When a donor atom is added to a semiconductor, the donor atom
In germanium at room temperature, the forbidden energy gap EG is about
In silicon at room temperature, the forbidden energy gap EG is about
Heavy doping of a semiconductor corresponds to impurity concentration of 1 part in
In any conductor, the hall voltage VH is proportional to
Where B is the existing magnetic field
At 0 deg K the percentage of quantum state occupied upto Fermi level is
In an n-type semiconductor, as temperature T increases, the Fermi level EF
A semiconductor has ………… temperature coefficient of resistance.
Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
In a p - type semiconductor, as the acceptor concentration NA is increased, the Fermi level
In extrinsic semiconductor, conductivity varies with respect to temperature.
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor …
Which of following is not a trivalent impurity atom?
Of a given specimen, hall voltage is negative the semiconductor will be
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