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Test: Basic Electronics - 3 - Electrical Engineering (EE) MCQ


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25 Questions MCQ Test - Test: Basic Electronics - 3

Test: Basic Electronics - 3 for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: Basic Electronics - 3 questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Basic Electronics - 3 MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Basic Electronics - 3 below.
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Test: Basic Electronics - 3 - Question 1

An electron in the conduction band–

Test: Basic Electronics - 3 - Question 2

Resistivity of a semiconductor depends upon–

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Test: Basic Electronics - 3 - Question 3

In an intrinsic semiconductor–

Test: Basic Electronics - 3 - Question 4

Covalent bond exists in –

Test: Basic Electronics - 3 - Question 5

In a good conductor, the energy gap between the conduction band and the valence band is –

Test: Basic Electronics - 3 - Question 6

The energy band gap of silicon is –

Test: Basic Electronics - 3 - Question 7

The forbidden energy band gap in conductors, semiconductor and insulators are EG1, EG2 and EG3 respectively then –

Test: Basic Electronics - 3 - Question 8

Which of the following is not a semiconductor?

Test: Basic Electronics - 3 - Question 9

Three semiconductors are arranged in the increasing order of their energy gap as follows. The correct arrangement is –

Test: Basic Electronics - 3 - Question 10

P-type semiconductor is prepared by doping silicon or germanium semoconductor by –

Test: Basic Electronics - 3 - Question 11

N-type semiconductor is obtained when silicon or germanium is doped by –

Test: Basic Electronics - 3 - Question 12

If a small amount of phosphorus is added to silicon–

Test: Basic Electronics - 3 - Question 13

P-type semiconductors are–

Test: Basic Electronics - 3 - Question 14

The electrical conductivity of a pure silicon or germanium sample can be increased by

Test: Basic Electronics - 3 - Question 15

The electrical resistivity of –

Test: Basic Electronics - 3 - Question 16

The addition of a very small quantity of aluminium to a silicon or germanium crystal makes it–

Test: Basic Electronics - 3 - Question 17

Doping of a semiconductor with small traces of impurity atoms generally changes the resistivity as follows–

Detailed Solution for Test: Basic Electronics - 3 - Question 17

 

Test: Basic Electronics - 3 - Question 18

The most commonly used semiconductor is ………..

Test: Basic Electronics - 3 - Question 19

An intrinsic semiconductor at the absolute zero of temperature–

Test: Basic Electronics - 3 - Question 20

The forbidden energy gap is largest in the case of –

Test: Basic Electronics - 3 - Question 21

The majority carriers of electricity in a N-type semiconductor are –

Test: Basic Electronics - 3 - Question 22

The addition of pentavalent impurity to a semiconductor creates more–

Test: Basic Electronics - 3 - Question 23

Reverse bias on a junction diode–

Test: Basic Electronics - 3 - Question 24

The width of the depletion layer in a P-N junction diode–

Test: Basic Electronics - 3 - Question 25

Nucleus is made of–

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