Test: N Junction Diode - Electrical Engineering (EE) MCQ

42 mA

48 mA

51 mA

54 mA

0.025 volts per degree C

0.250 volts per degree C

0.030 volts per degree C

0.014 volts per degree C

junction capacitance

charged storage capacitance

Depletion capacitance

Channel length modulation

Doping concentration only

Applied voltage only

Both doping concentration and appliedvoltage

Barrier potential only

Increases exponentially with forward biasvoltage

Decreases exponentially with forward biasvoltage

Decreases lineally with forward bias voltage

Increases lineally with forward bias voltage

Alloy

Grown

Diffused

Point contact

Of the order of the reverse time

Negligible in comparison to the reverserecovery time

Greater than the reverse recovery time

Equal to the mean carrier lifetime t for theexcess minority carriers

Is relatively cheap

Needs lower doping level

Has high temperature and current capacity

Has lower breakdown voltage

Reverse bias region below the breakdownvoltage

Reverse breakdown region

Forward bias region

Forward bias content current mode

By a dc source

In the middle of its negative resistance region

In the positive resistance region nearest tozero

In the reverse direction

V_D < 0

0 ≤V_D < V_P

V_P ≤ V_D < V_V

V_D ≥ V_V

A metal semiconductor point contact diode

A microwave mixer diode

Often used as a microwave oscillator

Suitable to use as a microwave switch

High reverse blocking capability

High forward current rating

Inverting capability

Poor turn off performance

Peak clipper

Voltage regulator

Harmonic generator

Switching diode for frequencies up to GHz range.

Has an extremely short recovery time

Is mainly used as a harmonic generator

Conducts equally well in both directions

Is an ideal rectifiers of high frequency signals

Has no depletion layer

has metal semiconductor junctions

Has fast recovery time

Is a bipolar device

Low noise amplifier

Variable capacitance device

Power supply rectifier

Low lever detector

Parametric amplifier

Frequency tuner

Voltage controlled oscillator

Phase shifter

Backward diode

P - N junction diode

Tunnel diode

Varactor diode

Photo emissive effect

Photo voltaic effect

Photo conductive effect

None

Impact ionization

strong electric field

Emission of electrons

Rise in temperature

Forward bias exceeding about 6 volts

Forward bias less than about 6 volts

Reverse bias exceeding about 6 volts

Reverse bias less than about 6+ volts

Increase

Decreases

First increases and then decreases

Remain constant

holes

electrons

both holes & electrons

phonons

Peak

Barrier

Threshold

Path