Test: Electronic Devices & Circuits - 7 - Electrical Engineering (EE) MCQ

Assertion (A): The reverse current in a p-n junction is nearly constant.

Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.

An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μ_n electron mobility, μ_p hole mobility, Δ_n (Δ_p) is the excess electron (hole) density ].

Resistivity of metals is expressed in terms of

Figure shows characteristics curves for bipolar transistor. These curves are

Zener diode is invariably used with

The relation between plate current and plate voltage of a vacuum diode is called

Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e^--hole pair generation will be

The maximum rectification efficiency in case of full wave rectifier is

For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be

When an electron rises through a potential of 100 V it will acquired an energy of

Which one of the following gain equations is correct for a MOSFET common-source amplifier?
(g_m is mutual conductance, and R_D is load resistance at the drain)

If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of

Which of the following is the ferric electric material?

The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called

In photo electric emission, the threshold frequency f₀, work function U_w, and Planck's constant h are related as

In which n type device does p substrate extend upto silicon dioxide layer?

In a N-type semi-conductor, the concentration of minority carriers is mainly depends on

The band gap of Si at room temperature is

Spot the odd one out

Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.

Figure represents a

If the energy gap of a semiconductor is 1.1 eV, then it would be.