Test: SRAM & DRAM - Computer Science Engineering (CSE) MCQ

Explanation: SRAM will retain data as long it is powered up and it does not need to be refreshed as DRAM. It is designed for low power consumption and used in preference .DRAM is cheaper than SRAM but it is based on refresh circuitry as it loses charge since the capacitor is the storage element.

Explanation: Pseudo RAM uses DRAM cells because of its higher memory density and it have refresh control which is an additional function of DRAM and is suitable for low power consumption. It has both the advantages of SRAM and DRAM.

Explanation: CMOS is complementary metal oxide semiconductor which is used by MAC and IBM PC as storage element because it contains configuration data of SRAM and is battery back-up to ensure that it is powered up when the computer is switched off.

Explanation: TTL or transistor-transistor logic which is a type of bipolar junction transistor access data very fastly but consumes lots of power whereas CMOS is used in low power consumption.

Explanation: SRAM access data in approximately 4ns because of its flip-flop arrangement of transistors whereas the data access time in DRAM is approximately 60ns since it has a single capacitor for one-bit storage.

Explanation: Miniature Card is a SRAM memory card proposed by Intel in the 1980s but it was no longer manufactured.

Explanation: Six MOSFETs are required for a typical SRAM. Each bit of SRAM is stored in four transistors which form two cross-coupled inverters.

Explanation: 1T-RAM is a pseudo-static RAM which is developed by MoSyS,Inc. PROM, EPROM, and EEPROM are non-volatile memories.

Explanation: Random Access Memory is the primary storage which can access data only when it is powered up. But non-volatile SRAM can access data even when the power supply is lost. It is used in many applications like networking, aerospace etc.

Explanation: The low power consumption makes SRAM easily convertible to non-volatile memory, by adding a small battery it can retain its data even when the main power is lost.

Explanation: DRAM is used in PCs and Embedded systems because of its low cost. SRAM, flash memory and EEPROM are more costly than DRAM.

Explanation: DRAM is highly denser and cheaper because it only uses a single capacitor for storing one bit.

Explanation: DRAM uses a small capacitor whose voltage represents a binary zero which is used a storage element in DRAM in which a single transistor cell is used to store each bit of data.

Explanation: Four to six transistors are used to store a single bit of data and form a flip-flop logic gate and thus SRAM is faster in accessing data.

Explanation: DRAM is said to be more volatile because it has a capacitor as its storage element in which the data disappears when the capacitor loses its charge so even when the device is powered the data can be lost.

Explanation: Trench capacitor can store from 4-256 Mb but planar capacitor can store up to 1 Mb.

Explanation: Stacked-cell can store greater than 1 Gb. Planar capacitor can store up to 1 Mb and trench capacitor can store 4-256 Mb.

Explanation: Both SRAM and DRAM are volatile memories and flash memory and EPROM are non-volatile memories. DRAM has storage element as a capacitor whose charge loses gradually thereby losing data.

Explanation: The chip capacity is dependent on the number of transistors which can be fabricated on the silicon, and DRAM offers more storage capacity than SRAM.

Explanation: Video RAM is a derivative of DRAM. It functions like a DRAM and has additional functions to access data for video hardware for creating the display.