Test: Semiconductor Physics - Electrical Engineering (EE) MCQ
10 Questions MCQ Test - Test: Semiconductor Physics
In the problems assume the parameter given in following table. Use the temperature T= 300 K unless otherwise stated.
In germanium semiconductor material at T 400 K the intrinsic concentration is (x 10^14 per cc)
In germanium semiconductor material at T 400 K the intrinsic concentration is (x 10^14 per cc)
The intrinsic carrier concentration in silicon is to be no greater than ni = 1 x 10^12 cc. The maximum temperature allowed for the silicon is ( Eg = 1.12 eV)
| 1 Crore+ students have signed up on EduRev. Have you? Download the App |
Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0eV and material B has a bandgap energy of 1.2 eV. The ratio of intrinsic concentration of material A to that ofmaterial B is
In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is
In silicon at T = 300 K if the Fermi energy is 0.22 eV above the valence band energy, the value of p0 is
The thermal-equilibrium concentration of hole p0 in silicon at T = 300 K is 1015 cm3. The value of n0 is
In germanium semiconductor at T 300 K, the acceptor concentrations is Na 1013 cm3 and donor concentration is Nd 0. The thermal equilibrium concentration p0 is
A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )
Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cms. The electron mobility is
A particular intrinsic semiconductor has a resistivity of 50 (ohm-cm) at T = 300 K and 5 (ohm-cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is
Top Courses for Electrical Engineering (EE)
Important Questions for Semiconductor Physics
Semiconductor Physics MCQs with Answers
Online Tests for Semiconductor Physics
|
© EduRev
|
Education Revolution
|
|
