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Intrinsic and Extrinsic Semiconductors Video Lecture | Modern Physics for IIT JAM
FAQs on Intrinsic and Extrinsic Semiconductors Video Lecture - Modern Physics for IIT JAM
| 1. What is the difference between intrinsic and extrinsic semiconductors? |  |
Ans. Intrinsic semiconductors are pure semiconducting materials, such as silicon or germanium, that have an equal number of electrons and holes at room temperature. Extrinsic semiconductors, on the other hand, are impure semiconducting materials that have been intentionally doped with impurities to alter their electrical properties.
| 2. How are intrinsic semiconductors formed? | |
Ans. Intrinsic semiconductors are formed by carefully controlling the manufacturing process of pure materials, such as silicon or germanium. These materials are typically grown in a controlled environment with high purity levels to minimize the presence of impurities, resulting in a material with intrinsic electrical properties.
| 3. What are impurities in extrinsic semiconductors? | |
Ans. Impurities in extrinsic semiconductors are intentionally added during the manufacturing process to alter the electrical properties of the material. These impurities, also known as dopants, can be either donor impurities (adding extra electrons) or acceptor impurities (creating additional holes) in the semiconductor crystal lattice.
| 4. How do extrinsic semiconductors differ from intrinsic semiconductors in terms of conductivity? | |
Ans. Extrinsic semiconductors have higher conductivity compared to intrinsic semiconductors. This is because the intentional addition of impurities in extrinsic semiconductors creates more charge carriers (electrons or holes), significantly increasing the material's electrical conductivity.
| 5. Can you provide examples of intrinsic and extrinsic semiconductors? | |
Ans. Silicon and germanium are examples of intrinsic semiconductors. They have an equal number of electrons and holes at room temperature. Extrinsic semiconductors include materials like n-type silicon doped with phosphorus (donor impurity) or p-type silicon doped with boron (acceptor impurity). These doped materials have altered electrical properties due to the intentional addition of impurities.
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