Electrical Engineering (EE) Exam > Electrical Engineering (EE) Videos > Electrical Engineering SSC JE (Technical) > Introduction to Bipolar Junction Transistor (BJT)
Introduction to Bipolar Junction Transistor (BJT) Video Lecture | Electrical Engineering SSC JE (Technical) - Electrical Engineering (EE)
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FAQs on Introduction to Bipolar Junction Transistor (BJT) Video Lecture - Electrical Engineering SSC JE (Technical) - Electrical Engineering (EE)
| 1. What is a Bipolar Junction Transistor (BJT)? |  |
Ans. A Bipolar Junction Transistor (BJT) is a type of transistor that uses both electron and hole charge carriers. It consists of three layers of semiconductor materials, each doped with different impurities to create either an NPN or PNP configuration.
| 2. How does a BJT work? | |
Ans. A BJT works by controlling the flow of current between its collector and emitter terminals using a small current at the base terminal. When a small current is applied at the base, it allows a larger current to flow between the collector and emitter, thus amplifying the signal.
| 3. What are the different regions of operation for a BJT? | |
Ans. A BJT can operate in three different regions: the cutoff region, the active region, and the saturation region. In the cutoff region, there is no current flow between the collector and emitter. In the active region, the BJT amplifies the input signal. In the saturation region, the BJT allows maximum current flow between the collector and emitter.
| 4. What are the advantages of using a BJT? | |
Ans. Some advantages of using a BJT include high current gain, fast switching speed, low noise, and high input impedance. BJTs are also relatively inexpensive and readily available.
| 5. How do you determine the configuration (NPN or PNP) of a BJT? | |
Ans. The configuration of a BJT (NPN or PNP) is determined by the doping of the semiconductor layers. In an NPN BJT, the emitter is P-doped, the base is N-doped, and the collector is P-doped. In a PNP BJT, the doping is reversed: the emitter is N-doped, the base is P-doped, and the collector is N-doped.
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