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Test: Collector To Base Bias - Electrical Engineering (EE) MCQ


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10 Questions MCQ Test Analog and Digital Electronics - Test: Collector To Base Bias

Test: Collector To Base Bias for Electrical Engineering (EE) 2024 is part of Analog and Digital Electronics preparation. The Test: Collector To Base Bias questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Collector To Base Bias MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Collector To Base Bias below.
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Test: Collector To Base Bias - Question 1

The collector current (IC) that is obtained in a collector to base biased transistor is_________

Detailed Solution for Test: Collector To Base Bias - Question 1

The collector current is analysed by the DC analysis of a transistor. It involves the DC equivalent circuit of a transistor. The base current is first found and the collector current is obtained from the relation, IC=IBβ.

Test: Collector To Base Bias - Question 2

The collector to emitter voltage (VCE) is obtained by_________

Detailed Solution for Test: Collector To Base Bias - Question 2

The collector to emitter voltage is obtained in order to find the operating point of a transistor. It is taken when there is no signal applied to the transistor. The point thus obtained lies in the cut off region when the transistor is used as a switch.

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Test: Collector To Base Bias - Question 3

What is the DC characteristic used to prove that the transistor is indeed biased in saturation mode?

Detailed Solution for Test: Collector To Base Bias - Question 3

When in a transistor is driven into saturation, we use VCE(SAT) as another linear parameter. In, addition when a transistor is biased in saturation mode, we have IC < βIB. This characteristic used to prove that the transistor is indeed biased in saturation mode.

Test: Collector To Base Bias - Question 4

The thermal runway is avoided in a collector to base bias because_________

Detailed Solution for Test: Collector To Base Bias - Question 4

The self destruction of a transistor due to increase temperature is called thermal run away. It is avoided by the negative feedback produced by the base resistor in a collector to base bias. The IC which is responsible for the damage is reduced by decreased output signal.

Test: Collector To Base Bias - Question 5

When the temperature is increased, what happens to the collector current after a feedback is given?

Detailed Solution for Test: Collector To Base Bias - Question 5

Before the feedback is applied, when the temperature is increased, the reverse saturation increases. The collector current also increases. When the feedback is applied, the base current increases with decreasing collector current and the thermal runway too.

Test: Collector To Base Bias - Question 6

The demerit of a collector to base bias is_________

Detailed Solution for Test: Collector To Base Bias - Question 6

When the stability factor S=1, the collector resistor value should be very large when compared to the base resistor. So, when RC is large we need to provide large power supply which increases the cost. At the same time, as the base resistor is small we need to provide small power supply.

Test: Collector To Base Bias - Question 7

The negative feedback does good for DC signal by_________

Detailed Solution for Test: Collector To Base Bias - Question 7

The resistor RB can provide negative feedback for both AC and DC signals. The negative feedback for DC signal is done good as it can provide stable operating point. On the other side, the negative feedback is badly done for AC signal by decreasing the voltage gain.

Test: Collector To Base Bias - Question 8

In the circuit, transistor has β =60, VBE=0.7V. Find the collector to emitter voltage drop VCE.

Detailed Solution for Test: Collector To Base Bias - Question 8

We know, IC=(VCC-VBE)/RB
By putting the values, we have IC=5.9mA. IE=IC/α. So, IE=5.99mA.
VCE= VCC-RC(IC+IB). We have VCE=6V.

Test: Collector To Base Bias - Question 9

In the circuit shown below, β =100 and VBE=0.7V. The Zener diode has a breakdown voltage of 6V. Find the operating point.

Detailed Solution for Test: Collector To Base Bias - Question 9

 We know, by KVL -12+(IC+IB)1K+6+VBE=0
We have IE=5.3. IC= αIE=5.24mA. From another loop, -12+IEIK+VBE=0
We have, VCE=12-5.3m*1000=6.7V. Hence the Q point is (6.7V, 5.3mA).

Test: Collector To Base Bias - Question 10

When the β value is large for a given transistor, the IC and VCE values are given by_________

Detailed Solution for Test: Collector To Base Bias - Question 10

The base current IB is zero when β value is large. So, the VCE changes to VCC-RCIC. The collector current IC is changed to (VCC-VBE)/RB from β(VCC-VBE)/(1+ β)RE+ RB.

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