In a p-n junction diode not connected to any circuit,a)the potential i...
At junction a potential barrier/depletion layer is formed as shown, with n-side at higher potential and p-side at lower potential. Therefore, there is an electric field at the junction directed from the n-side to p-side
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In a p-n junction diode not connected to any circuit,a)the potential i...
Explanation:
In a p-n junction diode, the p-type region is doped with acceptor impurities and has an excess of holes (positive charge carriers), while the n-type region is doped with donor impurities and has an excess of electrons (negative charge carriers). When these two regions are brought in contact, a diffusion of charge carriers occurs due to the concentration gradient.
Electric Field at the Junction:
As the electrons from the n-type region diffuse into the p-type region, they leave behind positively charged donor ions. Similarly, as the holes from the p-type region diffuse into the n-type region, they leave behind negatively charged acceptor ions. This creates a region near the junction that is depleted of free charge carriers, known as the depletion region.
The depletion region acts as a barrier to further diffusion of charge carriers. However, due to the immobile ions present in the depletion region, an electric field is established across the junction. This electric field prevents the further movement of charge carriers and maintains the equilibrium.
Direction of the Electric Field:
In a p-n junction diode, the electric field at the junction is directed from the n-type side to the p-type side. This can be explained by considering the charges present in the depletion region. The positively charged donor ions in the n-type region create an electric field pointing towards the junction. Similarly, the negatively charged acceptor ions in the p-type region create an electric field pointing away from the junction. The combination of these two electric fields results in a net electric field directed from the n-type side to the p-type side.
Potential Difference:
Due to the presence of the electric field, there is a potential difference across the junction. This potential difference is known as the built-in potential or barrier potential. The p-type side is at a higher potential than the n-type side. The potential gradually increases from the n-type side to the p-type side within the depletion region.
Conclusion:
In summary, in a p-n junction diode not connected to any circuit, the potential is not the same everywhere. The p-type side is at a higher potential than the n-type side. There is an electric field at the junction directed from the n-type side to the p-type side. This electric field is established due to the presence of immobile ions in the depletion region.
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