On which of the following does the collector current not depends upon?...
Collector current depends linearly of the saturation current and exponentially to the ratio of the voltage difference between the base and collector and thermal voltage.
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On which of the following does the collector current not depends upon?...
The collector current in a bipolar junction transistor (BJT) is determined by various factors such as the saturation current, thermal voltage, and the voltage difference between the base and emitter. However, it is important to note that the collector current does not depend on the saturation current.
Explanation:
1. Saturation Current:
The saturation current (also known as the reverse saturation current or the leakage current) is the current that flows across the base-emitter junction when the transistor is in the reverse-biased mode. This current is typically very small and is dependent on the physical properties of the transistor. However, the collector current is not directly affected by the saturation current.
2. Thermal Voltage:
The thermal voltage, also known as the thermal voltage equivalent, is a parameter that characterizes the relationship between temperature and voltage in a semiconductor device. It is determined by the ratio of the Boltzmann constant to the electron charge and is typically around 26 mV at room temperature. The thermal voltage affects the behavior of the base-emitter junction and influences the collector current indirectly through its impact on the base-emitter voltage.
3. Voltage Difference between Base and Emitter:
The voltage difference between the base and emitter, commonly referred to as the base-emitter voltage (Vbe), plays a crucial role in determining the collector current. The base-emitter junction is forward-biased, and the voltage applied to it controls the flow of current through the transistor. By varying the base-emitter voltage, the collector current can be modulated.
4. Collector Current:
The collector current (Ic) is primarily dependent on the base current (Ib) and the current gain of the transistor (hfe or β). The base current is controlled by the voltage difference between the base and emitter (Vbe), and the current gain determines the amplification factor between the base and collector currents. Therefore, the collector current indirectly depends on the voltage difference between the base and emitter.
In conclusion, the collector current in a BJT does not depend on the saturation current, but it is influenced by the thermal voltage and the voltage difference between the base and emitter.