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 An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDS is very small. What is the value of the device transconductance parameter kn?
  • a)
     2 mA/V2
  • b)
    20 mA/V2
  • c)
    0.2 A/V2
  • d)
    2 A/V2
Correct answer is option 'A'. Can you explain this answer?
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An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistan...
Use the standard mathematical expression to determine the value of kn.
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An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistan...
Ω.

The linear resistance of an n-channel MOSFET in saturation region can be given by:

RL = 1 / (μn * Cox * (W/L) * VOV^2)

Where,
μn = electron mobility in the channel
Cox = oxide capacitance per unit area
W/L = width-to-length ratio of the channel
VOV = overdrive voltage

Assuming μn = 200 cm2/Vs, Cox = 10 nF/cm2, and W/L = 10, we can calculate the overdrive voltage as:

VOV = sqrt(1 / (RL * μn * Cox * (W/L))) = sqrt(1 / (1 * 10^3 * 200 * 10^-9 * 10)) = 0.05 V

Therefore, the overdrive voltage of the MOSFET is 0.05 V, which is much lower than the given VOV of 0.5 V. This suggests that the MOSFET is not operating in saturation region, but rather in the linear region. In this case, the linear resistance is simply equal to the drain-source resistance (RDSon) of the MOSFET, which is 1 kΩ.
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An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDSis very small. What is the value of the device transconductance parameter kn?a)2 mA/V2b)20 mA/V2c)0.2 A/V2d)2 A/V2Correct answer is option 'A'. Can you explain this answer?
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