Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > In the saturation region of the MOSFET the sa...
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In the saturation region of the MOSFET the saturation current is
- a)Independent of the voltage difference between the source and the drain
- b)Depends directly on the voltage difference between the source and the drain
- c)Depends directly on the overdriving voltage
- d)Depends directly on the voltage supplied to the gate terminal
Correct answer is option 'A'. Can you explain this answer?
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Verified Answer
In the saturation region of the MOSFET the saturation current isa)Inde...
Saturation current does not depends on the voltage difference between the source and the drain in the saturation region of a MOSFET.
Most Upvoted Answer
In the saturation region of the MOSFET the saturation current isa)Inde...
Explanation:
In the saturation region of a MOSFET, the drain current (ID) is primarily determined by the voltage difference between the gate and the source (VGS) and the voltage difference between the drain and the source (VDS). However, the saturation current (ID,sat) is independent of the voltage difference between the source and the drain (VDS).
Reasoning:
To understand why the saturation current is independent of VDS, we need to understand the behavior of a MOSFET in the saturation region. In this region, both the gate-source voltage (VGS) and the drain-source voltage (VDS) are high enough to create an inversion layer in the channel, resulting in a high drain current.
Key points:
1. In the saturation region, the MOSFET operates as a voltage-controlled current source.
2. The saturation current is determined by the overdriving voltage (VGS - VT), where VT is the threshold voltage of the MOSFET.
3. The saturation current is also influenced by the physical dimensions and doping concentrations of the device.
4. The saturation current is relatively constant over a wide range of VDS values.
5. The saturation current can be approximated by the equation ID,sat = 0.5 * µn * Cox * (W/L) * (VGS - VT)^2, where µn is the electron mobility, Cox is the oxide capacitance per unit area, W is the channel width, and L is the channel length.
Conclusion:
In the saturation region of a MOSFET, the saturation current is independent of the voltage difference between the source and the drain. It is primarily determined by the overdriving voltage (VGS - VT) and other device parameters.
In the saturation region of a MOSFET, the drain current (ID) is primarily determined by the voltage difference between the gate and the source (VGS) and the voltage difference between the drain and the source (VDS). However, the saturation current (ID,sat) is independent of the voltage difference between the source and the drain (VDS).
Reasoning:
To understand why the saturation current is independent of VDS, we need to understand the behavior of a MOSFET in the saturation region. In this region, both the gate-source voltage (VGS) and the drain-source voltage (VDS) are high enough to create an inversion layer in the channel, resulting in a high drain current.
Key points:
1. In the saturation region, the MOSFET operates as a voltage-controlled current source.
2. The saturation current is determined by the overdriving voltage (VGS - VT), where VT is the threshold voltage of the MOSFET.
3. The saturation current is also influenced by the physical dimensions and doping concentrations of the device.
4. The saturation current is relatively constant over a wide range of VDS values.
5. The saturation current can be approximated by the equation ID,sat = 0.5 * µn * Cox * (W/L) * (VGS - VT)^2, where µn is the electron mobility, Cox is the oxide capacitance per unit area, W is the channel width, and L is the channel length.
Conclusion:
In the saturation region of a MOSFET, the saturation current is independent of the voltage difference between the source and the drain. It is primarily determined by the overdriving voltage (VGS - VT) and other device parameters.
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In the saturation region of the MOSFET the saturation current isa)Independent of the voltage difference between the source and the drainb)Depends directly on the voltage difference between the source and the drainc)Depends directly on the overdriving voltaged)Depends directly on the voltage supplied to the gate terminalCorrect answer is option 'A'. Can you explain this answer?
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