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With an increase in temperature, the Fermi level in an intrinsic semiconductor
- a)Moves closer to the conduction band edge
- b)Moves closer to the valence and edge
- c)Moves into the conduction band
- d)Remains at the center of the forbidden gap
Correct answer is option 'D'. Can you explain this answer?
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With an increase in temperature, the Fermi level in an intrinsic semic...
The Fermi level of an intrinsic semiconductor is unchanged and remains at the center of the forbidden band gap. As temperature increases, both electron and holes are produced in equal number keeping the semiconductor intrinsic and Fermi level stays at the center.
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With an increase in temperature, the Fermi level in an intrinsic semic...
Fermi Level in Intrinsic Semiconductors with Temperature
Intrinsic semiconductors are those that have equal numbers of electrons and holes at room temperature. The Fermi level is an important concept in the study of semiconductors, as it determines the probability of electrons and holes occupying the energy levels in the material.
Effect of Temperature on Fermi Level
As temperature increases, the Fermi level in an intrinsic semiconductor remains at the center of the forbidden gap. This is because the number of electrons and holes in the material remains the same at different temperatures, and the probability of occupying energy levels is determined by the Fermi-Dirac distribution.
Explanation
At low temperatures, most of the electrons and holes are in the valence band and the Fermi level is closer to the valence band edge. As temperature increases, some electrons gain enough energy to move into the conduction band, creating more holes in the valence band. However, the number of electrons and holes in the material remains the same, and the Fermi level remains at the center of the forbidden gap.
Conclusion
In conclusion, the Fermi level in an intrinsic semiconductor remains at the center of the forbidden gap with temperature. This is because the number of electrons and holes in the material remains the same, and the probability of occupying energy levels is determined by the Fermi-Dirac distribution.
Intrinsic semiconductors are those that have equal numbers of electrons and holes at room temperature. The Fermi level is an important concept in the study of semiconductors, as it determines the probability of electrons and holes occupying the energy levels in the material.
Effect of Temperature on Fermi Level
As temperature increases, the Fermi level in an intrinsic semiconductor remains at the center of the forbidden gap. This is because the number of electrons and holes in the material remains the same at different temperatures, and the probability of occupying energy levels is determined by the Fermi-Dirac distribution.
Explanation
At low temperatures, most of the electrons and holes are in the valence band and the Fermi level is closer to the valence band edge. As temperature increases, some electrons gain enough energy to move into the conduction band, creating more holes in the valence band. However, the number of electrons and holes in the material remains the same, and the Fermi level remains at the center of the forbidden gap.
Conclusion
In conclusion, the Fermi level in an intrinsic semiconductor remains at the center of the forbidden gap with temperature. This is because the number of electrons and holes in the material remains the same, and the probability of occupying energy levels is determined by the Fermi-Dirac distribution.
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With an increase in temperature, the Fermi level in an intrinsic semiconductora)Moves closer to the conduction band edgeb)Moves closer to the valence and edgec)Moves into the conduction bandd)Remains at the center of the forbidden gapCorrect answer is option 'D'. Can you explain this answer?
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