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A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )a)43.2%b)78.1%c)96.3%d)54.3%Correct answer is option 'B'. Can you explain this answer? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )a)43.2%b)78.1%c)96.3%d)54.3%Correct answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )a)43.2%b)78.1%c)96.3%d)54.3%Correct answer is option 'B'. Can you explain this answer?.

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