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The following currents are measured in a uniformly doped npn bipolar transistor:
InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mA
IR = 0.20 mA, IG = 1 μA, IpC0 = 1 μA
IR = 0.20 mA, IG = 1 μA, IpC0 = 1 μA
Q.
The α is
- a)0.667
- b)0.733
- c)0.787
- d)0.8
Correct answer is option 'C'. Can you explain this answer?
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The following currents are measured in a uniformly doped npn bipolar t...
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The following currents are measured in a uniformly doped npn bipolar t...
To solve this problem, we need to understand the different currents in a bipolar transistor.
1. InE: This is the emitter current. It is the sum of the base current (IB) and the collector current (IC). InE = IB + IC.
2. IpE: This is the base current. It is the current flowing into the base terminal of the transistor.
3. InC: This is the collector current. It is the current flowing into the collector terminal of the transistor.
4. IR: This is the current flowing out of the collector terminal of the transistor. It is also known as the reverse current.
5. IG: This is the current flowing into the gate terminal of the transistor. However, in a bipolar transistor, there is no gate terminal. The gate terminal is associated with field-effect transistors (FETs), not bipolar transistors. Therefore, IG is not a relevant parameter in this context.
Now, let's analyze the given currents:
InE = 1.20 mA: This is the emitter current. It is the sum of the base current (IB) and the collector current (IC).
IpE = 0.10 mA: This is the base current. It is the current flowing into the base terminal of the transistor.
InC = 1.18 mA: This is the collector current. It is the current flowing into the collector terminal of the transistor.
IR = 0.20 mA: This is the reverse current, which is the current flowing out of the collector terminal of the transistor.
As for IG, it is not a relevant parameter in this context. It is likely a typo or a misunderstanding.
To summarize:
InE = 1.20 mA
IpE = 0.10 mA
InC = 1.18 mA
IR = 0.20 mA
1. InE: This is the emitter current. It is the sum of the base current (IB) and the collector current (IC). InE = IB + IC.
2. IpE: This is the base current. It is the current flowing into the base terminal of the transistor.
3. InC: This is the collector current. It is the current flowing into the collector terminal of the transistor.
4. IR: This is the current flowing out of the collector terminal of the transistor. It is also known as the reverse current.
5. IG: This is the current flowing into the gate terminal of the transistor. However, in a bipolar transistor, there is no gate terminal. The gate terminal is associated with field-effect transistors (FETs), not bipolar transistors. Therefore, IG is not a relevant parameter in this context.
Now, let's analyze the given currents:
InE = 1.20 mA: This is the emitter current. It is the sum of the base current (IB) and the collector current (IC).
IpE = 0.10 mA: This is the base current. It is the current flowing into the base terminal of the transistor.
InC = 1.18 mA: This is the collector current. It is the current flowing into the collector terminal of the transistor.
IR = 0.20 mA: This is the reverse current, which is the current flowing out of the collector terminal of the transistor.
As for IG, it is not a relevant parameter in this context. It is likely a typo or a misunderstanding.
To summarize:
InE = 1.20 mA
IpE = 0.10 mA
InC = 1.18 mA
IR = 0.20 mA
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The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2025 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer?.
The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2025 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer?.
Solutions for The following currents are measured in a uniformly doped npn bipolar transistor:InE = 1.20 mA, IpE = 0.10 mA, InC = 1.18 mAIR = 0.20 mA, IG = 1 μA, IpC0 =1 μAQ. Theα isa)0.667b)0.733c)0.787d)0.8Correct answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
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