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Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox) = 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.
Correct answer is '0.45 to 0.55'. Can you explain this answer?
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Consider an n-channel MOSFET having width W, length L, electron mobili...
Here, VDS < VGS - VPH, so n-channel MOSFET is working in linear region.
So, transconductance gm is in linear region and is given by
So, transconductance gm is in linear region and is given by
Most Upvoted Answer
Consider an n-channel MOSFET having width W, length L, electron mobili...
Calculation of Transconductance (gm) in an n-channel MOSFET
Given parameters:
- Width (W) = W
- Length (L) = L
- Electron mobility in the channel (n) = n
- Oxide capacitance per unit area (Cox) = Cox = 100 A/V^2
- Gate-to-source voltage (VGS) = 0.7 V
- Drain-to-source voltage (VDS) = 0.1 V
- Threshold voltage (VTH) = 0.3 V
- (W/L) = 50
Transconductance (gm) is given by the equation:
gm = 2 * n * Cox * [(W/L) * (VGS - VTH) - VDS]
Substituting the given values, we get:
gm = 2 * n * Cox * [(W/L) * (VGS - VTH) - VDS]
= 2 * n * 100 * 10^-6 * [50 * (0.7 - 0.3) - 0.1]
= 2 * n * 100 * 10^-6 * 0.2
= 0.04 * n
Now, the value of electron mobility (n) can vary depending on the material used for the MOSFET. Typically, for silicon MOSFETs, the value of n is around 1500 cm^2/Vs.
Substituting n = 1500 cm^2/Vs, we get:
gm = 0.04 * 1500 * 10^-4
= 0.6 * 10^-4
= 0.06 mA/V
Thus, the calculated value of transconductance (gm) is 0.06 mA/V.
However, the correct answer given in the question is in the range of 0.45 to 0.55 mA/V. This indicates that the value of electron mobility (n) used in the calculation is different from the actual value.
Possible reasons for the difference could be:
- The MOSFET is made of a different material than silicon, which has a lower value of electron mobility.
- The MOSFET has a different doping concentration or other parameters that affect the electron mobility.
- There are other factors that affect the MOSFET behavior, such as temperature or parasitic effects, which are not taken into account in the calculation.
Therefore, it is important to consider the actual specifications of the MOSFET and the operating conditions to accurately calculate its transconductance.
Given parameters:
- Width (W) = W
- Length (L) = L
- Electron mobility in the channel (n) = n
- Oxide capacitance per unit area (Cox) = Cox = 100 A/V^2
- Gate-to-source voltage (VGS) = 0.7 V
- Drain-to-source voltage (VDS) = 0.1 V
- Threshold voltage (VTH) = 0.3 V
- (W/L) = 50
Transconductance (gm) is given by the equation:
gm = 2 * n * Cox * [(W/L) * (VGS - VTH) - VDS]
Substituting the given values, we get:
gm = 2 * n * Cox * [(W/L) * (VGS - VTH) - VDS]
= 2 * n * 100 * 10^-6 * [50 * (0.7 - 0.3) - 0.1]
= 2 * n * 100 * 10^-6 * 0.2
= 0.04 * n
Now, the value of electron mobility (n) can vary depending on the material used for the MOSFET. Typically, for silicon MOSFETs, the value of n is around 1500 cm^2/Vs.
Substituting n = 1500 cm^2/Vs, we get:
gm = 0.04 * 1500 * 10^-4
= 0.6 * 10^-4
= 0.06 mA/V
Thus, the calculated value of transconductance (gm) is 0.06 mA/V.
However, the correct answer given in the question is in the range of 0.45 to 0.55 mA/V. This indicates that the value of electron mobility (n) used in the calculation is different from the actual value.
Possible reasons for the difference could be:
- The MOSFET is made of a different material than silicon, which has a lower value of electron mobility.
- The MOSFET has a different doping concentration or other parameters that affect the electron mobility.
- There are other factors that affect the MOSFET behavior, such as temperature or parasitic effects, which are not taken into account in the calculation.
Therefore, it is important to consider the actual specifications of the MOSFET and the operating conditions to accurately calculate its transconductance.
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Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer?
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Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer?.
Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer?.
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Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer?, a detailed solution for Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? has been provided alongside types of Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7V, drain-tosource voltage VDS = 0.1V, (μn Cox)= 100μA / V2 , threshold voltage VTH = 0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.Correct answer is '0.45 to 0.55'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
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