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Consider the following statements:1.For finding the transistor behaviour at high frequency it is necessary to examine the diffusion mechanism.2.At low frequency it is assumed that the transistor responds instantly to changes of input voltage or current.3.The hybrid-jr model is valid under dynamic conditions when the rate of change of \/BEis small enough so that the base incremental current/^ is small compared with the collector incremental current/^4. The parameter fTis a frequency characteristic of a transistor.Which of the above statements are correct?a)3 and 4 b)1 and 3c)1, 2, 3 and 4 d)1 and 2Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider the following statements:1.For finding the transistor behaviour at high frequency it is necessary to examine the diffusion mechanism.2.At low frequency it is assumed that the transistor responds instantly to changes of input voltage or current.3.The hybrid-jr model is valid under dynamic conditions when the rate of change of \/BEis small enough so that the base incremental current/^ is small compared with the collector incremental current/^4. The parameter fTis a frequency characteristic of a transistor.Which of the above statements are correct?a)3 and 4 b)1 and 3c)1, 2, 3 and 4 d)1 and 2Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements:1.For finding the transistor behaviour at high frequency it is necessary to examine the diffusion mechanism.2.At low frequency it is assumed that the transistor responds instantly to changes of input voltage or current.3.The hybrid-jr model is valid under dynamic conditions when the rate of change of \/BEis small enough so that the base incremental current/^ is small compared with the collector incremental current/^4. The parameter fTis a frequency characteristic of a transistor.Which of the above statements are correct?a)3 and 4 b)1 and 3c)1, 2, 3 and 4 d)1 and 2Correct answer is option 'C'. Can you explain this answer?.

Solutions for Consider the following statements:1.For finding the transistor behaviour at high frequency it is necessary to examine the diffusion mechanism.2.At low frequency it is assumed that the transistor responds instantly to changes of input voltage or current.3.The hybrid-jr model is valid under dynamic conditions when the rate of change of \/BEis small enough so that the base incremental current/^ is small compared with the collector incremental current/^4. The parameter fTis a frequency characteristic of a transistor.Which of the above statements are correct?a)3 and 4 b)1 and 3c)1, 2, 3 and 4 d)1 and 2Correct answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

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