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In an unbiased p – n junction, holes diffuses to n – region from p – region because (a) The electron in the n – region and which of them are free attracts them (b) They are moved to the junction by the potential difference. (c) The concentration of the holes at p – region is more as compared to that of the n – region (d) All of the above.?
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In an unbiased p – n junction, holes diffuses to n – region from p – r...
(c) is the correct option.

The usual tendency of the charge carriers is to disperse towards the lower concentration region from the higher concentration region. So it can be said that in an unbiased p-n junction, holes disperse from p-region to the n-region as the p-region has greater concentration of holes than in n-region.
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Read the following text and answer the following questions on the basis of the same:Light Emitting Diode:It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n → p (where they are minority carriers) and holes are sent from p → n (where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias).Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available.Q. Threshold voltage of LED is

Read the following text and answer the following questions on the basis of the same:Light Emitting Diode:It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n → p (where they are minority carriers) and holes are sent from p → n (where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias).Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available.Q. LED emits light

Read the following text and answer the following questions on the basis of the same:Light Emitting Diode:It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n → p (where they are minority carriers) and holes are sent from p → n (where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias).Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available.Q. LED is a

Read the following text and answer the following questions on the basis of the same:Light Emitting Diode:It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n → p (where they are minority carriers) and holes are sent from p → n (where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias).Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available.Q. During recombination at the junction, emitted photons have

In an unbiased p – n junction, holes diffuses to n – region from p – region because (a) The electron in the n – region and which of them are free attracts them (b) They are moved to the junction by the potential difference. (c) The concentration of the holes at p – region is more as compared to that of the n – region (d) All of the above.?
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In an unbiased p – n junction, holes diffuses to n – region from p – region because (a) The electron in the n – region and which of them are free attracts them (b) They are moved to the junction by the potential difference. (c) The concentration of the holes at p – region is more as compared to that of the n – region (d) All of the above.? for Class 12 2024 is part of Class 12 preparation. The Question and answers have been prepared according to the Class 12 exam syllabus. Information about In an unbiased p – n junction, holes diffuses to n – region from p – region because (a) The electron in the n – region and which of them are free attracts them (b) They are moved to the junction by the potential difference. (c) The concentration of the holes at p – region is more as compared to that of the n – region (d) All of the above.? covers all topics & solutions for Class 12 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In an unbiased p – n junction, holes diffuses to n – region from p – region because (a) The electron in the n – region and which of them are free attracts them (b) They are moved to the junction by the potential difference. (c) The concentration of the holes at p – region is more as compared to that of the n – region (d) All of the above.?.
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