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A reverse biased diode placed in parallel with the base-emitter junction makes the circuit insensitive to variations in______with changes in temperature.
  • a)
    VBE
  • b)
    ICO
  • c)
    β
  • d)
    all of these parameters
Correct answer is option 'B'. Can you explain this answer?
Verified Answer
A reverse biased diode placed in parallel with the base-emitter juncti...
The circuit for the “diode compensation for I"CO is shown below.

Here, if the diode and the transistor are of the same type and material, the reverse saturation current I0 of the diode will increase with temperature at the same rate as the transistor current ICO.
Here, 
Since the diode is reverse biased by VBE = 0.2 V (for Ge device), the current through D is I0 and IB = I - I0.
Now, 

Thus, if β ≫ 1 and if I0 of D and ICO of transistor track each other over the desired temperature range, then IC remains essentially constant so that the circuit becomes insensitive toe variations in ICO with changes in temperature.
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Most Upvoted Answer
A reverse biased diode placed in parallel with the base-emitter juncti...
C)VBE
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