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In an n-p-n transistor biased in the active region, as the magnitude of the collector-base voltage is increased,
- a)the base current increases because more electrons are injected from the emitter.
- b)the base current increases because more holes are injected from the base to the collector.
- c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.
- d)the collector current increases slightly because the base width reduces.
Correct answer is option 'D'. Can you explain this answer?
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In an n-p-ntransistor biased in the active region, as the magnitude of...
IC increases because base width reduces due to early effect.
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In an n-p-ntransistor biased in the active region, as the magnitude of...
Explanation:
When an n-p-n transistor is biased in the active region, the magnitude of the collector-base voltage plays a crucial role in determining the behavior of the transistor. The correct answer is option 'D', which states that the collector current increases slightly because the base width reduces. Let's understand this in detail.
1. Operation in the active region:
When the transistor is biased in the active region, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased. In this region, the transistor operates as an amplifier, and small changes in the base current can result in significant changes in the collector current.
2. Base current and collector current:
In an n-p-n transistor, the base current (IB) is composed of electrons injected from the emitter region, while the collector current (IC) is composed of both electrons and holes. The electrons injected from the emitter combine with the holes in the base region, resulting in the base current.
3. Effect of collector-base voltage (VCB):
As the magnitude of the collector-base voltage is increased, the reverse bias across the base-collector junction also increases. This reverse bias induces a depletion region in the base region, causing the base width to reduce. The reduction in the base width has the following effects:
- Increased electric field: The increased reverse bias voltage results in an increased electric field across the base region.
- Accelerated charge carriers: The increased electric field accelerates the electrons and holes in the base region, reducing the transit time and increasing the collector current.
4. Increase in collector current:
Due to the reduced base width and the increased electric field, the transit time of charge carriers across the base region decreases. As a result, more charge carriers (electrons and holes) reach the collector region within a given time, leading to an increase in the collector current.
Therefore, option 'D' is the correct answer because the collector current increases slightly as the base width reduces due to the increased reverse bias across the base-collector junction.
When an n-p-n transistor is biased in the active region, the magnitude of the collector-base voltage plays a crucial role in determining the behavior of the transistor. The correct answer is option 'D', which states that the collector current increases slightly because the base width reduces. Let's understand this in detail.
1. Operation in the active region:
When the transistor is biased in the active region, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased. In this region, the transistor operates as an amplifier, and small changes in the base current can result in significant changes in the collector current.
2. Base current and collector current:
In an n-p-n transistor, the base current (IB) is composed of electrons injected from the emitter region, while the collector current (IC) is composed of both electrons and holes. The electrons injected from the emitter combine with the holes in the base region, resulting in the base current.
3. Effect of collector-base voltage (VCB):
As the magnitude of the collector-base voltage is increased, the reverse bias across the base-collector junction also increases. This reverse bias induces a depletion region in the base region, causing the base width to reduce. The reduction in the base width has the following effects:
- Increased electric field: The increased reverse bias voltage results in an increased electric field across the base region.
- Accelerated charge carriers: The increased electric field accelerates the electrons and holes in the base region, reducing the transit time and increasing the collector current.
4. Increase in collector current:
Due to the reduced base width and the increased electric field, the transit time of charge carriers across the base region decreases. As a result, more charge carriers (electrons and holes) reach the collector region within a given time, leading to an increase in the collector current.
Therefore, option 'D' is the correct answer because the collector current increases slightly as the base width reduces due to the increased reverse bias across the base-collector junction.
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In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer?
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In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer?.
In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In an n-p-ntransistor biased in the active region, as the magnitude of the collector-base voltage is increased,a)the base current increases because more electrons are injected from the emitter.b)the base current increases because more holes are injected from the base to the collector.c)the emitter current decreases because the base-emitter junction gets slightly less forward biased.d)the collector current increases slightly because the base width reduces.Correct answer is option 'D'. Can you explain this answer?.
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