Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Questions  >  Consider the statements associated with vario... Start Learning for Free
Consider the statements associated with various types of transistor configuration of a BJT:
1. In cut-off region, emitter and collector junctions are both reverse biased.
2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.
3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.
4. The phase shift introduced to the input in CC and CE configurations are each zero degree.
Q. Which of the above statements are correct ?
  • a)
    1 and 3    
  • b)
    2 and 4
  • c)
    1, 2 and 3    
  • d)
    1, 3 and 4
Correct answer is option 'A'. Can you explain this answer?
Verified Answer
Consider the statements associated with various types of transistor co...
• In saturation region, both emitter and collector junctions are forward biased.
• The phase shift introduced to the input signal in CC configuration is 0° while in CE configuration is 180°.
Hence, statements 2 and 4 are not correct.
View all questions of this test
Explore Courses for Electrical Engineering (EE) exam

Top Courses for Electrical Engineering (EE)

Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer?
Question Description
Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer?.
Solutions for Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electrical Engineering (EE). Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free.
Here you can find the meaning of Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer?, a detailed solution for Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? has been provided alongside types of Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Consider the statements associated with various types of transistor configuration of a BJT:1. In cut-off region, emitter and collector junctions are both reverse biased.2. In saturation region, emitter junction is forward biased while collector junction can be either forward biased or reverse biased.3. In active region, the collector junction is biased in the reverse biased and the emitter junction in the forward biased.4. The phase shift introduced to the input in CC and CE configurations are each zero degree.Q. Which of the above statements are correct ?a)1 and 3 b)2 and 4c)1, 2 and 3 d)1, 3 and 4Correct answer is option 'A'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.
Explore Courses for Electrical Engineering (EE) exam

Top Courses for Electrical Engineering (EE)

Explore Courses
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
10M+ students study on EduRev