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P-N junction diode is reverse biased when
- a)the barrier potential decreases
- b)the barrier potential increases
- c)more current flows
- d)resistance offered is low
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
P-N junction diode is reverse biased whena)the barrier potential decre...
Explanation:
A PN junction is formed by joining a P-type and an N-type semiconductor material. In a PN junction diode, the P-side is connected to the positive terminal of a battery and the N-side is connected to the negative terminal of the battery. This is called forward biasing. In this condition, the diode conducts current easily.
When a diode is reverse biased, the P-side is connected to the negative terminal of the battery and the N-side is connected to the positive terminal of the battery. This condition makes the diode an insulator. It does not allow the flow of current easily.
The reverse biasing condition increases the barrier potential of the diode. The barrier potential is the voltage that exists across a diode when it is not conducting any current. When a reverse voltage is applied to the diode, the barrier potential increases. The increase in the barrier potential of the diode increases the width of the depletion region. The depletion region is the layer between the P-type and N-type semiconductor material. This layer is devoid of any free electrons and holes.
When the width of the depletion region increases, the resistance offered by the diode also increases. This resistance blocks the flow of current through the diode.
Hence, it can be concluded that a PN junction diode is reverse biased when the barrier potential increases.
A PN junction is formed by joining a P-type and an N-type semiconductor material. In a PN junction diode, the P-side is connected to the positive terminal of a battery and the N-side is connected to the negative terminal of the battery. This is called forward biasing. In this condition, the diode conducts current easily.
When a diode is reverse biased, the P-side is connected to the negative terminal of the battery and the N-side is connected to the positive terminal of the battery. This condition makes the diode an insulator. It does not allow the flow of current easily.
The reverse biasing condition increases the barrier potential of the diode. The barrier potential is the voltage that exists across a diode when it is not conducting any current. When a reverse voltage is applied to the diode, the barrier potential increases. The increase in the barrier potential of the diode increases the width of the depletion region. The depletion region is the layer between the P-type and N-type semiconductor material. This layer is devoid of any free electrons and holes.
When the width of the depletion region increases, the resistance offered by the diode also increases. This resistance blocks the flow of current through the diode.
Hence, it can be concluded that a PN junction diode is reverse biased when the barrier potential increases.
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P-N junction diode is reverse biased whena)the barrier potential decreasesb)the barrier potential increasesc)more current flowsd)resistance offered is lowCorrect answer is option 'B'. Can you explain this answer?
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