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Potential barrier developed in a junction diode opposes
- a)minority carriers in both regions only
- b)majority carriers
- c)electrons in N-region
- d)hole in P-region
Correct answer is option 'B'. Can you explain this answer?
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Potential barrier developed in a junction diode opposesa)minority carr...
Potential Barrier in a Junction Diode
The junction diode is a two-terminal semiconductor device in which a p-type and an n-type semiconductor are joined together. The junction between the two regions is called the p-n junction.
When a p-type and an n-type semiconductor are joined together, a potential barrier is formed at the junction which opposes the flow of majority carriers across the junction.
Opposition to Majority Carriers
The potential barrier developed in a junction diode opposes the flow of majority carriers, i.e. holes in the p-region and electrons in the n-region. This is because the potential barrier creates a potential difference across the junction which opposes the flow of majority carriers.
For example, in the p-region, holes are the majority carriers, and they tend to diffuse into the n-region due to their concentration gradient. However, the potential barrier at the junction opposes this diffusion of holes, and hence, a depletion region is formed at the junction.
Similarly, in the n-region, electrons are the majority carriers, and they tend to diffuse into the p-region due to their concentration gradient. However, the potential barrier at the junction opposes this diffusion of electrons, and hence, a depletion region is formed at the junction.
Conclusion
Thus, the potential barrier developed in a junction diode opposes the flow of majority carriers across the junction, and this is the reason why the junction diode is a unidirectional device that allows the flow of current in only one direction.
The junction diode is a two-terminal semiconductor device in which a p-type and an n-type semiconductor are joined together. The junction between the two regions is called the p-n junction.
When a p-type and an n-type semiconductor are joined together, a potential barrier is formed at the junction which opposes the flow of majority carriers across the junction.
Opposition to Majority Carriers
The potential barrier developed in a junction diode opposes the flow of majority carriers, i.e. holes in the p-region and electrons in the n-region. This is because the potential barrier creates a potential difference across the junction which opposes the flow of majority carriers.
For example, in the p-region, holes are the majority carriers, and they tend to diffuse into the n-region due to their concentration gradient. However, the potential barrier at the junction opposes this diffusion of holes, and hence, a depletion region is formed at the junction.
Similarly, in the n-region, electrons are the majority carriers, and they tend to diffuse into the p-region due to their concentration gradient. However, the potential barrier at the junction opposes this diffusion of electrons, and hence, a depletion region is formed at the junction.
Conclusion
Thus, the potential barrier developed in a junction diode opposes the flow of majority carriers across the junction, and this is the reason why the junction diode is a unidirectional device that allows the flow of current in only one direction.
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Potential barrier developed in a junction diode opposesa)minority carriers in both regions onlyb)majority carriersc)electrons in N-regiond)hole in P-regionCorrect answer is option 'B'. Can you explain this answer?
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