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A semiconductor has equal electron and hole concentration of 2 × 108m−3 . On doping with a certain impurity, the electron concentration increases to 4 × 1010m−3 , then the new hole concentration of the semiconductor is
  • a)
    106m−3
  • b)
    108m−3
  • c)
    1010m−3
  • d)
    1012m−3
Correct answer is option 'A'. Can you explain this answer?
Most Upvoted Answer
A semiconductor has equal electron and hole concentration of 2 ×...
Understanding Semiconductor Doping
When a semiconductor is doped, it alters the balance of charge carriers (electrons and holes) in the material. Initially, we have equal concentrations of electrons and holes, both at 2 × 10^8 m–3.
Initial Conditions
- Electron concentration (n) = 2 × 10^8 m–3
- Hole concentration (p) = 2 × 10^8 m–3
Doping Effect
Upon doping with an impurity, the electron concentration increases to:
- New electron concentration (n') = 4 × 10^10 m–3
Charge Carrier Relationship
In intrinsic semiconductors, the product of electron and hole concentrations is constant, given by:
- n * p = ni² (where ni is the intrinsic carrier concentration)
After doping, the new relationship becomes:
- n' * p' = ni²
Given n' = 4 × 10^10 m–3, we need to find the new hole concentration (p').
Calculating the New Hole Concentration
Using the initial condition, we can calculate ni²:
- (2 × 10^8) * (2 × 10^8) = 4 × 10^16
Now, substitute into the relationship:
- (4 × 10^10) * p' = 4 × 10^16
Solving for p':
- p' = (4 × 10^16) / (4 × 10^10) = 10^6 m–3
Conclusion
Thus, the new hole concentration after doping is:
- p' = 10^6 m–3
The correct answer is option 'A', which is 10^6 m–3.
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Community Answer
A semiconductor has equal electron and hole concentration of 2 ×...
From the relation of equivalence of charge carrier in extrinsic and intrinsic carrier, we have nen= ni2 , where ne, n& ni represents electron density, hole density and number of intrinsic charge carrier density.
On substituting all the corresponding given values, we have
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A semiconductor has equal electron and hole concentration of 2 × 108m−3 . On doping with a certain impurity, the electron concentration increases to 4 × 1010m−3 , then the new hole concentration of the semiconductor isa)106m−3b)108m−3c)1010m−3d)1012m−3Correct answer is option 'A'. Can you explain this answer?
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