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The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________
  • a)
    -0.2 V
  • b)
    -0.5V
  • c)
    0.2 V
  • d)
    0.5 V
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
The potential difference between the base and the collector Vcb in a p...
Explanation:

PNP Transistor in Saturation Region:
In the saturation region of a PNP transistor, both the base-collector junction and the base-emitter junction are forward-biased. This allows for a high collector current to flow with minimal resistance.

Potential Difference Vcb:
The potential difference between the base and the collector Vcb can be calculated using the equation Vcb = Vc - Vb, where Vc is the voltage at the collector terminal and Vb is the voltage at the base terminal.

Calculation:
Since the PNP transistor is in saturation, the voltage at the collector terminal Vc is higher than the voltage at the base terminal Vb. Therefore, Vc > Vb.

Conclusion:
As a result, the potential difference between the base and the collector Vcb in a PNP transistor in saturation region is negative, as Vc > Vb. The correct answer is option 'B' (-0.5V).
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Community Answer
The potential difference between the base and the collector Vcb in a p...
The value of Vcb is -0.5V for a pnp transistor and 0.5V for an npn transistor.
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The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________a)-0.2 Vb)-0.5Vc)0.2 Vd)0.5 VCorrect answer is option 'B'. Can you explain this answer?
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