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A semiconductor is doped with phosphorous atoms as impurity. The impurity levels created in the semiconductor are close to the
- a)top of the valence band
- b)bottom of the conduction band
- c)bottom of the valence band
- d)top of the conduction band
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
A semiconductor is doped with phosphorous atoms as impurity. The impur...
- N-type semiconductor: An extrinsic semiconductor where the dopant atoms provide extra conduction electrons to the host material like Phosphorus(P) in Silicon (Si) called donor impurities.
- For an n-type semiconductor, there are more electrons in the conduction band than there are holes in the valence band.
- This leads to formation of donor energy level below conduction band in forbidden energy gap, which implies that the probability of finding an electron near the conduction band edge is larger than the probability of finding a hole at the valence band edge.
Hence, the correct option is (2)
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A semiconductor is doped with phosphorous atoms as impurity. The impur...
Introduction to Doping in Semiconductors
Doping is the process of intentionally introducing impurities into a semiconductor to modify its electrical properties. When phosphorous (P) is used as a dopant in silicon (Si), it creates an n-type semiconductor.
Why Phosphorous Doping?
- Phosphorous has five valence electrons.
- Silicon, with four valence electrons, allows phosphorous to bond with it while providing an extra electron.
Location of Impurity Levels
- The extra electron from phosphorous is not tightly bound to the nucleus and can be easily excited.
- The energy level associated with this extra electron is very close to the conduction band.
Impurity Levels Explained
- Bottom of the Conduction Band: This is where the conduction electrons reside that contribute to electrical conduction.
- Impurity Levels: When phosphorous is added, it creates donor energy levels just below the conduction band. These levels allow the extra electrons to jump easily into the conduction band with minimal energy input.
Conclusion
- Hence, the correct answer is option B: the impurity levels created by phosphorous doping are close to the bottom of the conduction band.
- This positioning facilitates easier conduction of electricity, enhancing the semiconductor's conductivity.
Understanding these concepts is crucial for designing and utilizing semiconductor devices effectively in electronics.
Doping is the process of intentionally introducing impurities into a semiconductor to modify its electrical properties. When phosphorous (P) is used as a dopant in silicon (Si), it creates an n-type semiconductor.
Why Phosphorous Doping?
- Phosphorous has five valence electrons.
- Silicon, with four valence electrons, allows phosphorous to bond with it while providing an extra electron.
Location of Impurity Levels
- The extra electron from phosphorous is not tightly bound to the nucleus and can be easily excited.
- The energy level associated with this extra electron is very close to the conduction band.
Impurity Levels Explained
- Bottom of the Conduction Band: This is where the conduction electrons reside that contribute to electrical conduction.
- Impurity Levels: When phosphorous is added, it creates donor energy levels just below the conduction band. These levels allow the extra electrons to jump easily into the conduction band with minimal energy input.
Conclusion
- Hence, the correct answer is option B: the impurity levels created by phosphorous doping are close to the bottom of the conduction band.
- This positioning facilitates easier conduction of electricity, enhancing the semiconductor's conductivity.
Understanding these concepts is crucial for designing and utilizing semiconductor devices effectively in electronics.
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A semiconductor is doped with phosphorous atoms as impurity. The impurity levels created in the semiconductor are close to thea)top of the valence bandb)bottom of the conduction bandc)bottom of the valence bandd)top of the conduction bandCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2025 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A semiconductor is doped with phosphorous atoms as impurity. The impurity levels created in the semiconductor are close to thea)top of the valence bandb)bottom of the conduction bandc)bottom of the valence bandd)top of the conduction bandCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A semiconductor is doped with phosphorous atoms as impurity. The impurity levels created in the semiconductor are close to thea)top of the valence bandb)bottom of the conduction bandc)bottom of the valence bandd)top of the conduction bandCorrect answer is option 'B'. Can you explain this answer?.
Solutions for A semiconductor is doped with phosphorous atoms as impurity. The impurity levels created in the semiconductor are close to thea)top of the valence bandb)bottom of the conduction bandc)bottom of the valence bandd)top of the conduction bandCorrect answer is option 'B'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
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