UGC NET Exam > UGC NET Questions > The incorrect statement is/are:(A)In Schottky...
Start Learning for Free
The incorrect statement is/are:
(A) In Schottky defect the density of the crystal decreases.
(B) In n-type extrinsic semi-conductor, the fermi level lies close to the valence band
(C) The crystal system with cell dimension a = b ≠ c and α = β = 90º ≠ γ is tetragonal
(D) The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pm
(A) In Schottky defect the density of the crystal decreases.
(B) In n-type extrinsic semi-conductor, the fermi level lies close to the valence band
(C) The crystal system with cell dimension a = b ≠ c and α = β = 90º ≠ γ is tetragonal
(D) The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pm
- a)B,C and D
- b)B and C
- c)A and C
- d)none of these
Correct answer is option 'A'. Can you explain this answer?
| FREE This question is part of | Download PDF Attempt this Test |
Most Upvoted Answer
The incorrect statement is/are:(A)In Schottky defect the density of th...
A) In a Schottky defect, the density of the crystal decreases. This statement is correct. A Schottky defect is a type of point defect in a crystal lattice involving vacancy defects. In this defect, a pair of nearest-neighbor atoms, one cation, and one anion, are missing from their lattice site. Because atoms or ions are missing, the overall density of the crystal lattice decreases.
B) In n-type extrinsic semiconductors, the Fermi level lies close to the valence band. This statement is incorrect. In an n-type extrinsic semiconductor, which is created by doping a pure semiconductor with donor impurities (like arsenic or phosphorus atoms in silicon), the Fermi level actually lies closer to the conduction band, rather than the valence band as the electrons from the donor impurities are easy to excite to the conduction band.
(C) The crystal system with cell dimensions a = b = c, and α = β = γ = 90° is tetragonal. This statement is incorrect. The described crystal system is actually cubic, not tetragonal. In a tetragonal crystal system, a ≠ b = c, and all angles are 90°.
(D) The radius of a cation that can fit into an Octahedral void with 212 pm as the radius of the lattice point is 47.7pm. This statement is incorrect.
In a crystalline structure, the radius ratio for a cation fitting into an Octahedral void is √2/2 (around 0.414).
Radius ratio = 0.414
r+ = (radius ratio) x r-
r+ = 0.414 x 212 = 87.8ppm
then the radius of the cation that can fit into the octahedral void would be around 0.414 times 212 pm, which is approximately 87.8 pm, not 47.7pm.
B) In n-type extrinsic semiconductors, the Fermi level lies close to the valence band. This statement is incorrect. In an n-type extrinsic semiconductor, which is created by doping a pure semiconductor with donor impurities (like arsenic or phosphorus atoms in silicon), the Fermi level actually lies closer to the conduction band, rather than the valence band as the electrons from the donor impurities are easy to excite to the conduction band.
(C) The crystal system with cell dimensions a = b = c, and α = β = γ = 90° is tetragonal. This statement is incorrect. The described crystal system is actually cubic, not tetragonal. In a tetragonal crystal system, a ≠ b = c, and all angles are 90°.
(D) The radius of a cation that can fit into an Octahedral void with 212 pm as the radius of the lattice point is 47.7pm. This statement is incorrect.
In a crystalline structure, the radius ratio for a cation fitting into an Octahedral void is √2/2 (around 0.414).
Radius ratio = 0.414
r+ = (radius ratio) x r-
r+ = 0.414 x 212 = 87.8ppm
then the radius of the cation that can fit into the octahedral void would be around 0.414 times 212 pm, which is approximately 87.8 pm, not 47.7pm.
Free Test
FREE
| Start Free Test |
Community Answer
The incorrect statement is/are:(A)In Schottky defect the density of th...
The incorrect statement is (B) "In n-type extrinsic semiconductor, the Fermi level lies close to the valence band."
In n-type extrinsic semiconductor, the Fermi level lies close to the conduction band, not the valence band.
In n-type extrinsic semiconductor, the Fermi level lies close to the conduction band, not the valence band.
Attention UGC NET Students!
To make sure you are not studying endlessly, EduRev has designed UGC NET study material, with Structured Courses, Videos, & Test Series. Plus get personalized analysis, doubt solving and improvement plans to achieve a great score in UGC NET.
|
Explore Courses for UGC NET exam
|
|
Similar UGC NET Doubts
Top Courses for UGC NETView all
The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer?
Question Description
The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? for UGC NET 2024 is part of UGC NET preparation. The Question and answers have been prepared according to the UGC NET exam syllabus. Information about The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for UGC NET 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer?.
The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? for UGC NET 2024 is part of UGC NET preparation. The Question and answers have been prepared according to the UGC NET exam syllabus. Information about The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for UGC NET 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer?.
Solutions for The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for UGC NET.
Download more important topics, notes, lectures and mock test series for UGC NET Exam by signing up for free.
Here you can find the meaning of The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice The incorrect statement is/are:(A)In Schottky defect the density of the crystal decreases.(B)In n-type extrinsic semi-conductor, the fermi level lies close to the valence band(C)The crystal system with cell dimensiona = b ≠ candα = β = 90º ≠ γ is tetragonal(D)The radius of cation that can be fit into an Oh void with 212pm as the radius of the lattice point is 47.7pma)B,C and Db)B and Cc)A and Cd)none of theseCorrect answer is option 'A'. Can you explain this answer? tests, examples and also practice UGC NET tests.
|
|
Explore Courses for UGC NET exam
|
|
Suggested Free Tests
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
|
© EduRev
|
Education Revolution
|
|
Signup to see your scores
go up within 7 days!
Access 1000+ FREE Docs, Videos and Tests
Takes less than 10 seconds to signup